An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley-Read-Hall recombination
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Published Version
Date
2015-07-24
Authors
Zhao, Chao
Ng, Tien Khee
Prabaswara, Aditya
Conroy, Michele
Jahangir, Shafat
Frost, Thomas
O'Connell, John
Holmes, Justin D.
Parbrook, Peter J.
Bhattacharya, P.
Journal Title
Journal ISSN
Volume Title
Publisher
The Royal Society of Chemistry
Published Version
Abstract
We present a detailed study of the effects of dangling bond passivation and the comparison of different sulfide passivation processes on the properties of InGaN/GaN quantum-disk (Qdisk)-in-nanowire based light emitting diodes (NW-LEDs). Our results demonstrated the first organic sulfide passivation process for nitride nanowires (NWs). The results from Raman spectroscopy, photoluminescence (PL) measurements, and X-ray photoelectron spectroscopy (XPS) showed that octadecylthiol (ODT) effectively passivated the surface states, and altered the surface dynamic charge, and thereby recovered the band-edge emission. The effectiveness of the process with passivation duration was also studied. Moreover, we also compared the electro-optical performance of NW-LEDs emitting at green wavelength before and after ODT passivation. We have shown that the Shockley–Read–Hall (SRH) non-radiative recombination of NW-LEDs can be greatly reduced after passivation by ODT, which led to a much faster increasing trend of quantum efficiency and higher peak efficiency. Our results highlighted the possibility of employing this technique to further design and produce high performance NW-LEDs and NW-lasers.
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Keywords
Efficiency , Nanowires , Passivation , Quantum efficiency , X ray photoelectron spectroscopy , Band-edge emissions , Electro optical performance , Nanowire light emitting diodes , Non-radiative recombinations , Photoluminescence measurements , Shockley-Read-Hall recombinations , Sulfide passivations , Light emitting diodes
Citation
ZHAO, C., NG, T. K., PRABASWARA, A., CONROY, M., JAHANGIR, S., FROST, T., O'CONNELL, J., HOLMES, J. D., PARBROOK, P. J., BHATTACHARYA, P. & OOI, B. S. 2015. An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley-Read-Hall recombination. Nanoscale, 7, 16658-16665. http://dx.doi.org/10.1039/C5NR03448E