Crystallographically controlled synthesis of SnSe nanowires: potential in resistive memory devices

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dc.contributor.authorDavitt, Fionán
dc.contributor.authorManning, Hugh G.
dc.contributor.authorRobinson, Fred
dc.contributor.authorHawken, Samantha L.
dc.contributor.authorBiswas, Subhajit
dc.contributor.authorPetkov, Nikolay
dc.contributor.authorvan Druenen, Maart
dc.contributor.authorBoland, John J.
dc.contributor.authorReid Gillian
dc.contributor.authorHolmes, Justin D.
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderEngineering and Physical Sciences Research Councilen
dc.date.accessioned2020-07-17T09:53:20Z
dc.date.available2020-07-17T09:53:20Z
dc.date.issued2020-06-09
dc.date.updated2020-07-03T14:02:15Z
dc.description.abstractHere the controlled growth of SnSe nanowires by a liquid injection chemical vapor deposition (CVD) method employing a distorted octahedral [SnCl4{n BuSe(CH2)3Sen Bu}] single‐source diselenoether precursor is reported. CVD with this single‐source precursor allows morphological and compositional control of the SnSex nanostructures formed, including the transformation of SnSe2 nanoflakes into SnSe nanowires and again to SnSe nanoflakes with increasing growth temperature. Significantly, highly crystalline SnSe nanowires with an orthorhombic Pnma 62 crystal structure can be controllably synthesized in two growth directions, either <011> or <100>. The ability to tune the growth direction of SnSe will have important implications for devices constructed using these nanocrystals. The SnSe nanowires with a <011> growth direction display a reversible polarity‐dependent memory switching ability, not previously reported for nanoscale SnSe. A resistive switching on/off ratio of 103 without the use of a current compliance limit is seen, illustrating the potential use of SnSe nanowires for low‐power nonvolatile memory applications.en
dc.description.sponsorshipScience Foundation Ireland (Grant Numbers: 18/IF/6324)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid2000474en
dc.identifier.citationDavitt, F., Manning, H. G., Robinson, F., Hawken, S. L., Biswas, S., Petkov, N., van Druenen, M., Boland, J. J., Reid G. and Holmes, J. D. (2020) 'Crystallographically controlled synthesis of SnSe nanowires: potential in resistive memory devices', Advanced Materials Interfaces, 2000474 (10 pp). doi: 10.1002/admi.202000474en
dc.identifier.doi10.1002/admi.202000474en
dc.identifier.eissn2196-7350
dc.identifier.endpage10en
dc.identifier.journaltitleAdvanced Materials Interfacesen
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/10264
dc.language.isoenen
dc.publisherWileyen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Research Centres/12/RC/2278/IE/Advanced Materials and BioEngineering Research Centre (AMBER)/en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Investigator Programme/14/IA/2513/IE/Silicon Compatible, Direct Band-Gap Nanowire Materials For Beyond-CMOS Devices/en
dc.relation.projectinfo:eu-repo/grantAgreement/RCUK/EPSRC/EP/M50662X/1/GB/DTA - University of Southampton/en
dc.relation.projectinfo:eu-repo/grantAgreement/RCUK/EPSRC/EP/N509747/1/GB/DTP 2016-2017 University of Southampton/en
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP2::ERC/321160/EU/Cognitive Networks for Intelligent Materials and Devices/COGNETen
dc.relation.urihttps://onlinelibrary.wiley.com/doi/full/10.1002/admi.202000474
dc.rights© 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This is the peer reviewed version of the following article: ‘Crystallographically Controlled Synthesis of SnSe Nanowires: Potential in Resistive Memory Devices’, Adv. Mater. Interfaces 2020, 2000474, which has been published in final form at 10.1002/admi.202000474. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Self-Archiving.en
dc.subjectChemical vapor deposition (CVD)en
dc.subjectLayered materialsen
dc.subjectNanowiresen
dc.subjectResistive random‐access memory (RRAM)en
dc.subjectSnSeen
dc.titleCrystallographically controlled synthesis of SnSe nanowires: potential in resistive memory devicesen
dc.typeArticle (peer-reviewed)en
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