Carrier localization and in-situ annealing effect on quaternary Ga1-xInxAsySb1-y/GaAs quantum wells grown by Sb pre-deposition

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dc.contributor.authorThoma, Jiri
dc.contributor.authorLiang, Baolai
dc.contributor.authorLewis, Liam
dc.contributor.authorHegarty, Stephen P.
dc.contributor.authorHuyet, Guillaume
dc.contributor.authorHuffaker, Diana L.
dc.contributor.funderScience Foundation Ireland
dc.contributor.funderU.S. Department of Defense
dc.date.accessioned2017-07-28T09:23:23Z
dc.date.available2017-07-28T09:23:23Z
dc.date.issued2013
dc.description.abstractUsing temperature-dependent photoluminescence spectroscopy, we have investigated and compared intrinsic InGaAs, intrinsic GaInAsSb, and p-i-n junction GaInAsSb quantum wells (QWs) embedded in GaAs barriers. Strong carrier localization inside the intrinsic GaInAsSb/GaAs QW has been observed together with its decrease inside the p-i-n sample. This is attributed to the effect of an in-situ annealing during the top p-doped AlGaAs layer growth at an elevated temperature of 580 degrees C, leading to Sb-atom diffusion and even atomic redistribution. High-resolution X-ray diffraction measurements and the decrease of both maximum localization energy and full delocalization temperature in the p-i-n QW sample further corroborated this conclusion. (C) 2013 American Institute of Physics. (http://dx.doi.org/10.1063/1.4795866)en
dc.description.sponsorshipScience Foundation Ireland (SFI) Strategic Research Cluster, PiFAS (07/SRC/I1173); United States Department of Defense (NSSEFF N00244-09-1-0091)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid113101
dc.identifier.citationThoma, J., Liang, B., Lewis, L., Hegarty, S. P., Huyet, G. and Huffaker, D. L. (2013) 'Carrier localization and in-situ annealing effect on quaternary Ga1−xInxAsySb1−y/GaAs quantum wells grown by Sb pre-deposition', Applied Physics Letters, 102(11), pp. 113101. doi: 10.1063/1.4795866en
dc.identifier.doi10.1063/1.4795866
dc.identifier.endpage4
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued11
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4285
dc.identifier.volume102
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.4795866
dc.rights© 2013 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Thoma, J., Liang, B., Lewis, L., Hegarty, S. P., Huyet, G. and Huffaker, D. L. (2013) 'Carrier localization and in-situ annealing effect on quaternary Ga1−xInxAsySb1−y/GaAs quantum wells grown by Sb pre-deposition', Applied Physics Letters, 102(11), pp. 113101 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4795866en
dc.subjectMolecular-beam epitaxyen
dc.subjectOptical-propertiesen
dc.subjectThreshold-currenten
dc.subjectBand-gapen
dc.subjectLasersen
dc.subjectGainnasen
dc.subjectPerformanceen
dc.subjectSurfactanten
dc.subjectQuantum wellsen
dc.subjectIII-V semiconductorsen
dc.subjectPhotoluminescenceen
dc.subjectAnnealingen
dc.subjectCladdingen
dc.titleCarrier localization and in-situ annealing effect on quaternary Ga1-xInxAsySb1-y/GaAs quantum wells grown by Sb pre-depositionen
dc.typeArticle (peer-reviewed)en
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