ReS2/Si 2D/3D vertical heterojunction as a self-powered photodiode

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dc.contributor.authorIntonti, Kimberlyen
dc.contributor.authorPelella, Anielloen
dc.contributor.authorNeill, Hazelen
dc.contributor.authorPatil, Vilasen
dc.contributor.authorHurley, Paul K.en
dc.contributor.authorAnsari, Lidaen
dc.contributor.authorGity, Farzanen
dc.contributor.authorDi Bartolomeo, Antonioen
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderIrish Research Councilen
dc.contributor.funderHorizon 2020en
dc.date.accessioned2024-10-30T14:20:53Z
dc.date.available2024-10-30T14:20:53Z
dc.date.issued2024-10-24en
dc.description.abstract2D/3D van der Waals heterostructures provide an excellent platform for high-performance optoelectronic systems by combining the intrinsic properties of 2D and 3D materials. In this study, we fabricate and study a type II ReS2/Si van der Waals 2D/3D vertical heterojunction with multi-mode photodetection. In the dark, the heterojunction exhibits diode-like behavior with a low reverse current and a high rectification ratio of ∼103. Under illumination, the device shows a linear response to the light intensity. The ReS2/Si photodetector exhibits stable and repeatable switching behavior and can be operated in self-powered mode with a responsivity of about 0.10 mA/W at 10 mW incident power and a time response of 300 μs. Based on first-principles calculations, we propose a model to elucidate the photoconduction mechanisms occurring in the ReS2/Si heterostructure.en
dc.description.sponsorshipIrish Research Council (EPSPG/2023/1772)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid173505en
dc.identifier.citationIntonti, K., Pelella, A., Neill, H., Patil, V., Hurley, P. K., Ansari, L., Gity, F. and Di Bartolomeo, A. (2024) 'ReS2/Si 2D/3D vertical heterojunction as a self-powered photodiode', Applied Physics Letters, 125(17), 173505. https://doi.org/10.1063/5.0231243en
dc.identifier.doihttps://doi.org/10.1063/5.0231243en
dc.identifier.eissn1077-3118en
dc.identifier.issn0003-6951en
dc.identifier.issued17en
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.urihttps://hdl.handle.net/10468/16604
dc.identifier.volume125en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.ispartofApplied Physics Lettersen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Research Centres Programme::Phase 2/12/RC/2278_P2/IE/AMBER_Phase 2/en
dc.relation.projectinfo:eu-repo/grantAgreement/EC/H2020::RIA/871130/EU/Access to European Infrastructure for Nanoelectronics/ASCENTPlusen
dc.rights© 2024, the Authors. Published under an exclusive license by AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and AIP Publishing. This article appeared as: Intonti, K., Pelella, A., Neill, H., Patil, V., Hurley, P. K., Ansari, L., Gity, F. and Di Bartolomeo, A. (2024) 'ReS2/Si 2D/3D vertical heterojunction as a self-powered photodiode', Applied Physics Letters, 125(17), 173505, and may be found at:https://doi.org/10.1063/5.0231243en
dc.subject2D/3D van der Waals heterostructureen
dc.subjectHigh-performance optoelectronic systemen
dc.subjectReS2/Si photodetectoren
dc.titleReS2/Si 2D/3D vertical heterojunction as a self-powered photodiodeen
dc.typeArticle (peer-reviewed)en
oaire.citation.issue17en
oaire.citation.volume125en
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