Contact resistivity and suppression of Fermi level pinning in side-contacted germanium nanowires

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dc.contributor.authorKoleśnik-Gray, Maria M.
dc.contributor.authorLutz, Tarek
dc.contributor.authorCollins, Gillian
dc.contributor.authorBiswas, Subhajit
dc.contributor.authorHolmes, Justin D.
dc.contributor.authorKrstić, Vojislav
dc.contributor.funderHigher Education Authorityen
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2016-02-29T09:20:06Z
dc.date.available2016-02-29T09:20:06Z
dc.date.issued2013-10-08
dc.description.abstractElectrical properties of contact-interfaces in germanium nanowire field effect transistor devices are studied. In contrast to planar bulk devices, it is shown that the active conduction channel and gate length extend between and underneath the contact electrodes. Furthermore, direct scaling of contact resistivity and Schottky barrier height with electrode metal function is observed. The associated pinning parameter was found to be γ=0.65 ± 0.03γ=0.65 ± 0.03, which demonstrates a significant suppression of Fermi level pinning in quasi-one-dimensional structures.en
dc.description.sponsorshipScience Foundation Ireland (contract-number PI-award 08/IN.1/I1873 and contract-number CSET 08/CE/I1432); Higher Education Authority (Cycle 4 of the Programme for Research in Third-Level Institutions (PRTLI4))en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationKOLEŚNIK-GRAY, M. M., LUTZ, T., COLLINS, G., BISWAS, S., HOLMES, J. D. & KRSTIĆ, V. 2013. Contact resistivity and suppression of Fermi level pinning in side-contacted germanium nanowires. Applied Physics Letters, 103, 153101. http://scitation.aip.org/content/aip/journal/apl/103/15/10.1063/1.4821996en
dc.identifier.doi10.1063/1.4821996
dc.identifier.endpage153101 (3)en
dc.identifier.issn0003-6951
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage153101 (1)en
dc.identifier.urihttps://hdl.handle.net/10468/2407
dc.identifier.volume103en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://scitation.aip.org/content/aip/journal/apl/103/15/10.1063/1.4821996
dc.rights© 2013 AIP Publishing LLCen
dc.rights.urihttp://scitation.aip.org/termsconditionsen
dc.subjectField effect transistorsen
dc.subjectContact resistanceen
dc.subjectFermi levelen
dc.subjectGermaniumen
dc.subjectNanoelectronicsen
dc.subjectSchottky barriersen
dc.subjectSemiconductor-metal boundariesen
dc.subjectNanowiresen
dc.titleContact resistivity and suppression of Fermi level pinning in side-contacted germanium nanowiresen
dc.typeArticle (peer-reviewed)en
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