Diameter-driven crossover in resistive behaviour of heavily doped self-seeded germanium nanowires

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dc.contributor.authorConnaughton, Stephen
dc.contributor.authorKoleśnik-Gray, Maria M.
dc.contributor.authorHobbs, Richard G.
dc.contributor.authorLotty, Olan
dc.contributor.authorHolmes, Justin D.
dc.contributor.authorKrstić, Vojislav
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2016-09-30T08:27:46Z
dc.date.available2016-09-30T08:27:46Z
dc.date.issued2016-09-13
dc.date.updated2016-09-26T11:53:35Z
dc.description.abstractThe dependence of the resistivity with changing diameter of heavily-doped self-seeded germanium nanowires was studied for the diameter range 40 to 11 nm. The experimental data reveal an initial strong reduction of the resistivity with diameter decrease. At about 20 nm a region of slowly varying resistivity emerges with a peak feature around 14 nm. For diameters above 20 nm, nanowires were found to be describable by classical means. For smaller diameters a quantum-based approach was required where we employed the 1D Kubo–Greenwood framework and also revealed the dominant charge carriers to be heavy holes. For both regimes the theoretical results and experimental data agree qualitatively well assuming a spatial spreading of the free holes towards the nanowire centre upon diameter reduction.en
dc.description.sponsorshipScience Foundation Ireland (SFI contract-number PI-award 08/IN.1/I1873) (CSET 08/CE/I1432)).en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationConnaughton, S., Koleśnik-Gray, M., Hobbs, R., Lotty, O., Holmes, J. D. & Krstić, V. (2016) ‘Diameter-driven crossover in resistive behaviour of heavily doped self-seeded germanium nanowires’, Beilstein Journal of Nanotechnology, 7, pp. 1284-1288. doi:10.3762/bjnano.7.119en
dc.identifier.doi10.3762/bjnano.7.119
dc.identifier.endpage1288en
dc.identifier.issn2190-4286
dc.identifier.journaltitleBeilstein Journal of Nanotechnologyen
dc.identifier.startpage1284en
dc.identifier.urihttps://hdl.handle.net/10468/3137
dc.identifier.volume7en
dc.language.isoenen
dc.publisherBeilstein-Instituten
dc.relation.urihttp://www.beilstein-journals.org/bjnano/home/home.htm
dc.rights© 2016 Connaughton et al.; licensee Beilstein-Institut. This is an Open Access article under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. The license is subject to the Beilstein Journal of Nanotechnology terms and conditions: (http://www.beilstein-journals.org/bjnano) The definitive version of this article is the electronic one which can be found at:doi:10.3762/bjnano.7.119en
dc.rights.urihttp://creativecommons.org/licenses/by/4.0en
dc.subjectDiameter-dependenceen
dc.subjectGermaniumen
dc.subjectNanowireen
dc.subjectResistivityen
dc.subjectSelf-seededen
dc.titleDiameter-driven crossover in resistive behaviour of heavily doped self-seeded germanium nanowiresen
dc.typeArticle (peer-reviewed)en
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