Investigating interface states and oxide traps in the MoS2/oxide/Si system

Simple item page
dc.contributor.authorColeman, Emma M.
dc.contributor.authorMirabelli, Gioele
dc.contributor.authorBolshakov, P.
dc.contributor.authorZhao, P.
dc.contributor.authorCaruso, Enrico
dc.contributor.authorGity, Farzan
dc.contributor.authorMonaghan, Scott
dc.contributor.authorCherkaoui, Karim
dc.contributor.authorBalestra, V.
dc.contributor.authorWallace, R. M.
dc.contributor.authorYoung, C. D.
dc.contributor.authorDuffy, Ray
dc.contributor.authorHurley, Paul K.
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderHorizon 2020en
dc.date.accessioned2022-06-21T10:27:37Z
dc.date.available2022-06-21T10:27:37Z
dc.date.issued2021-06-09
dc.date.updated2022-06-20T09:54:42Z
dc.description.abstractThis paper reports on the study of inverted metal-oxide semiconductor (MOS) structures formed through mechanical exfoliation of MoS2 flakes onto Al2O3 or SiO2 layers grown on degenerately doped p type silicon substrates. Using Au/Ni metal top contacts, multi-frequency capacitance and conductance characterisation were performed to investigate electrically active defects in the MoS2/oxide structures. This data has been paired with physics-based ac simulations which indicate close to ideal interfacial properties.en
dc.description.sponsorshipScience Foundation Ireland (12/RC/2278_P2)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid108123en
dc.identifier.citationColeman, E., Mirabelli, G., Bolshakov, P., Zhao, P., Caruso, E., Gity, F., Monaghan, S., Cherkaoui, K., Balestra, V., Wallace, R. M., Young, C. D., Duffy, R. and Hurley, P. K.(2021) 'Investigating interface states and oxide traps in the MoS2/oxide/Si system', Solid-State Electronics, 186, 108123 (4pp). doi: 10.1016/j.sse.2021.108123en
dc.identifier.doi10.1016/j.sse.2021.108123en
dc.identifier.endpage4en
dc.identifier.issn0038-1101
dc.identifier.journaltitleSolid-State Electronicsen
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/13305
dc.identifier.volume186en
dc.language.isoenen
dc.publisherElsevier Ltd.en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI US Ireland R&D Partnership/13/US/I2862/IE/Understanding the Nature of Interfaces in Two Dimensional Electronic Devises (UNITE)/en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Investigator Programme/15/IA/3131/IE/Investigating Emerging 2D Semiconductor Technology/en
dc.relation.projectinfo:eu-repo/grantAgreement/EC/H2020::RIA/871130/EU/Access to European Infrastructure for Nanoelectronics/ASCENTPlusen
dc.rights© 2021, the Authors. Published by Elsevier Ltd. This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/).en
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en
dc.subject2D materialsen
dc.subjectInterface statesen
dc.subjectOxide trapsen
dc.subjectMoS2/oxide/Si systemen
dc.subjectMOSFETen
dc.subjectTunnel FETen
dc.titleInvestigating interface states and oxide traps in the MoS2/oxide/Si systemen
dc.typeArticle (peer-reviewed)en
Files
Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
Emma_C._Solid-State_Electronics_186_(2021)_108123.pdf
Size:
1.51 MB
Format:
Adobe Portable Document Format
Description:
Published Version
Download
License bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
license.txt
Size:
2.71 KB
Format:
Item-specific license agreed upon to submission
Description:
Download
Collections
Tyndall National Institute - Journal Articles
Chemistry - Journal Articles