A systematic study of (NH4)(2)S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0.53Ga0.47As/InP system for n-type and p-type In0.53Ga0.47As epitaxial layers

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dc.contributor.authorO'Connor, Éamon
dc.contributor.authorBrennan, B.
dc.contributor.authorDjara, Vladimir
dc.contributor.authorCherkaoui, Karim
dc.contributor.authorMonaghan, Scott
dc.contributor.authorNewcomb, Simon B.
dc.contributor.authorContreras, R.
dc.contributor.authorMilojevic, M.
dc.contributor.authorHughes, Gregory
dc.contributor.authorPemble, Martyn E.
dc.contributor.authorWallace, R. M.
dc.contributor.authorHurley, Paul K.
dc.contributor.funderScience Foundation Ireland
dc.contributor.funderNational Science Foundation
dc.contributor.funderSemiconductor Research Corporation
dc.contributor.funderSeventh Framework Programme
dc.date.accessioned2017-09-20T10:06:34Z
dc.date.available2017-09-20T10:06:34Z
dc.date.issued2011
dc.description.abstractIn this work, we present the results of an investigation into the effectiveness of varying ammonium sulphide (NH4)(2)S concentrations in the passivation of n-type and p-type In0.53Ga0.47As. Samples were degreased and immersed in aqueous (NH4)(2)S solutions of concentrations 22%, 10%, 5%, or 1% for 20 min at 295 K, immediately prior to atomic layer deposition of Al2O3. Multi-frequency capacitance-voltage (C-V) results on capacitor structures indicate that the lowest frequency dispersion over the bias range examined occurs for n-type and p-type devices treated with the 10% (NH4)(2)S solution. The deleterious effect on device behavior of increased ambient exposure time after removal from 10% (NH4)(2)S solution is also presented. Estimations of the interface state defect density (D-it) for the optimum 10% (NH4)(2)S passivated In0.53Ga0.47As devices extracted using an approximation to the conductance method, and also extracted using the temperature-modified high-low frequency C-V method, indicate that the same defect is present over n-type and p-type devices having an integrated D-it of similar to 2.5 x 10(12) cm(-2) (+/- 1 x 10(12) cm(-2)) with the peak density positioned in the middle of the In0.53Ga0.47As band gap at approximately 0.37 eV (+/- 0.03 eV) from the valence band edge. Both methods used for extracting D-it show very good agreement, providing evidence to support that the conductance method can be applied to devices incorporating high-k oxides on In0.53Ga0.47As. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3533959]en
dc.description.sponsorshipNational Science Foundation [NSF-ECCS-0925844]en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid24101
dc.identifier.citationO’Connor, É., Brennan, B., Djara, V., Cherkaoui, K., Monaghan, S., Newcomb, S. B., Contreras, R., Milojevic, M., Hughes, G., Pemble, M. E., Wallace, R. M. and Hurley, P. K. (2011) 'A systematic study of (NH4)2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0.53Ga0.47As/InP system for n-type and p-type In0.53Ga0.47As epitaxial layers', Journal of Applied Physics, 109(2), 024101 (10pp). doi: 10.1063/1.3533959en
dc.identifier.doi10.1063/1.3533959
dc.identifier.endpage10
dc.identifier.issn0021-8979
dc.identifier.issued2
dc.identifier.journaltitleJournal of Applied Physicsen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4740
dc.identifier.volume109
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::ICT/216171/EU/Silicon-based nanostructures and nanodevices for long term nanoelectronics applications/NANOSIL
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Strategic Research Cluster/07/SRC/I1172/IE/SRC FORME: Functional Oxides and Related Materials for Electronics/
dc.relation.urihttp://aip.scitation.org/doi/10.1063/1.3533959
dc.rights© 2011, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in O’Connor, É., Brennan, B., Djara, V., Cherkaoui, K., Monaghan, S., Newcomb, S. B., Contreras, R., Milojevic, M., Hughes, G., Pemble, M. E., Wallace, R. M. and Hurley, P. K. (2011) 'A systematic study of (NH4)2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0.53Ga0.47As/InP system for n-type and p-type In0.53Ga0.47As epitaxial layers', Journal of Applied Physics, 109(2), 024101 (10pp). doi: 10.1063/1.3533959 and may be found at http://aip.scitation.org/doi/10.1063/1.3533959en
dc.subjectCapacitanceen
dc.subjectOzoneen
dc.subjectPassivationen
dc.subjectAtomic layer depositionen
dc.subjectX-ray photoelectron spectroscopyen
dc.titleA systematic study of (NH4)(2)S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0.53Ga0.47As/InP system for n-type and p-type In0.53Ga0.47As epitaxial layersen
dc.typeArticle (peer-reviewed)en
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