Characterization of germanium/silicon p-n junction fabricated by low temperature direct wafer bonding and layer exfoliation

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dc.contributor.authorGity, Farzan
dc.contributor.authorByun, Ki Yeol
dc.contributor.authorLee, Ko-Hsin
dc.contributor.authorCherkaoui, Karim
dc.contributor.authorHayes, John M.
dc.contributor.authorMorrison, Alan P.
dc.contributor.authorColinge, Cindy
dc.contributor.authorCorbett, Brian M.
dc.contributor.funderScience Foundation Ireland
dc.date.accessioned2017-07-28T10:48:29Z
dc.date.available2017-07-28T10:48:29Z
dc.date.issued2012
dc.description.abstractThe current transport across a p-Ge/n-Si diode structure obtained by direct wafer bonding and layer exfoliation is analysed. A low temperature anneal at 400 degrees C for 30 min was used to improve the forward characteristics of the diode with the on/off ratio at -1 V being > 8000. Post anneal, the transport mechanism has a strong tunnelling component. This fabrication technique using a low thermal budget (T <= 400 degrees C) is an attractive option for heterogeneous integration. (C) 2012 American Institute of Physics. (doi:10.1063/1.3688174)en
dc.description.sponsorshipScience foundation Ireland (07/SRC/I1173, 07/IN/I937)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid92102
dc.identifier.citationGity, F., Byun, K. Y., Lee, K.-H., Cherkaoui, K., Hayes, J. M., Morrison, A. P., Colinge, C. and Corbett, B. (2012) 'Characterization of germanium/silicon p–n junction fabricated by low temperature direct wafer bonding and layer exfoliation', Applied Physics Letters, 100(9), pp. 092102. doi: 10.1063/1.3688174en
dc.identifier.doi10.1063/1.3688174
dc.identifier.endpage3
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued9
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4302
dc.identifier.volume100
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.3688174
dc.rights© 2012 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Gity, F., Byun, K. Y., Lee, K.-H., Cherkaoui, K., Hayes, J. M., Morrison, A. P., Colinge, C. and Corbett, B. (2012) 'Characterization of germanium/silicon p–n junction fabricated by low temperature direct wafer bonding and layer exfoliation', Applied Physics Letters, 100(9), pp. 092102 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3688174en
dc.subjectPerformanceen
dc.subjectHydrogenen
dc.subjectPhotodetectoren
dc.subjectSigeen
dc.subjectGermaniumen
dc.subjectAnnealingen
dc.subjectElemental semiconductorsen
dc.subjectTunnelingen
dc.subjectLeakage currentsen
dc.titleCharacterization of germanium/silicon p-n junction fabricated by low temperature direct wafer bonding and layer exfoliationen
dc.typeArticle (peer-reviewed)en
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