Room temperature magnetoelectric properties of type-II InAsSbP quantum dots and nanorings

Simple item page
dc.contributor.authorGambaryan, Karen M.
dc.contributor.authorAroutiounian, Vladimir M.
dc.contributor.authorHarutyunyan, V. G.
dc.contributor.authorMarquardt, Oliver
dc.contributor.authorSoukiassian, P. G.
dc.contributor.funderDeutscher Akademischer Austauschdienst
dc.contributor.funderArmenian National Science and Education Fund
dc.date.accessioned2017-07-28T10:48:30Z
dc.date.available2017-07-28T10:48:30Z
dc.date.issued2012
dc.description.abstractQuaternary InAsSbP quantum dots (QDs) and quantum rings (QRs) are grown on InAs (100) substrates by liquid phase epitaxy. High resolution scanning electron and atomic force microscopes are used for the characterization. The room temperature optoelectronic and magnetoelectric properties of the InAsSbP type-II QDs and QRs are investigated. For the QD-based structures, specific dips on the capacitance-voltage characteristic are revealed and measured, which are qualitatively explained by the holes thermal and tunnel emissions from the QDs. Specific fractures at room temperature are experimentally found in the magnetic field dependence of an electric sheet resistance for the InAsSbP QRs-based sample. (C) 2012 American Institute of Physics. (doi:10.1063/1.3676437)en
dc.description.sponsorshipGerman Academic Exchange Service; Armenian National Science and Education Fund based in New York, USAen
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid33104
dc.identifier.citationGambaryan, K. M., Aroutiounian, V. M., Harutyunyan, V. G., Marquardt, O. and Soukiassian, P. G. (2012) 'Room temperature magnetoelectric properties of type-II InAsSbP quantum dots and nanorings', Applied Physics Letters, 100(3), pp. 033104.en
dc.identifier.doi10.1063/1.3676437
dc.identifier.endpage4
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued3
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4307
dc.identifier.volume100
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.3676437
dc.rights© 2012 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Gambaryan, K. M., Aroutiounian, V. M., Harutyunyan, V. G., Marquardt, O. and Soukiassian, P. G. (2012) 'Room temperature magnetoelectric properties of type-II InAsSbP quantum dots and nanorings', Applied Physics Letters, 100(3), pp. 033104 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3676437en
dc.subjectQuantum dotsen
dc.subjectIII-V semiconductorsen
dc.subjectSemiconductor growthen
dc.subjectMagnetic fieldsen
dc.subjectEffective massen
dc.titleRoom temperature magnetoelectric properties of type-II InAsSbP quantum dots and nanoringsen
dc.typeArticle (peer-reviewed)en
Files
Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
3282.pdf
Size:
1.33 MB
Format:
Adobe Portable Document Format
Description:
Published Version
Download
Collections
Tyndall National Institute - Journal Articles