Analysis of the optical coupling between 2.3 μm GaSb diode lasers and passive waveguides for monolithic integration on Si platforms

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dc.contributor.authorPaparella, Micheleen
dc.contributor.authorMonge Barlome, Lauraen
dc.contributor.authorRodriguez, Jean Baptisteen
dc.contributor.authorCerutti, Laurenten
dc.contributor.authorGrande, Marcoen
dc.contributor.authorO'Faolain, Liamen
dc.contributor.authorTournie, Ericen
dc.contributor.funderHorizon 2020en
dc.contributor.funderAgence Nationale de la Rechercheen
dc.date.accessioned2025-03-18T14:57:52Z
dc.date.available2025-03-18T14:57:52Z
dc.date.issued2022-12-14en
dc.description.abstractAlthough discrete lasers grown on silicon have been demonstrated, light coupling into on-chip passive waveguides remains to be properly studied. We investigate theoretically the optical coupling between 2.3 μm GaSb-based diode lasers (DLs) epitaxially grown on a Silicon photonic chip and the passive waveguides.en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationPaparella, M., Barlome, L. M., Rodriguez, J. B., Cerutti, L., Grande, M., O’Faolain, L. and Tournié, E. (2022) 'Analysis of the optical coupling between 2.3 μm GaSb diode lasers and passive waveguides for monolithic integration on Si platforms', 2022 IEEE Photonics Conference (IPC), Vancouver, BC, Canada, 13-17 November 2022, pp. 1-2. https://doi.org/10.1109/IPC53466.2022.9975716en
dc.identifier.doi10.1109/IPC53466.2022.9975716en
dc.identifier.eissn2575-274Xen
dc.identifier.endpage2en
dc.identifier.isbn978-1-6654-3487-4en
dc.identifier.isbn978-1-6654-3488-1en
dc.identifier.issn2374-0140en
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/17180
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.ispartof2022 IEEE Photonics Conference (IPC), Vancouver, BC, Canada, 13-17 November 2022en
dc.relation.projectinfo:eu-repo/grantAgreement/EC/H2020::RIA/780240/EU/mid infraREd Fully Integrated CHemical sensors/REDFINCHen
dc.relation.projectinfo:eu-repo/grantAgreement/EC/H2020::MSCA-ITN-EJD/860808/EU/European Joint Doctorate Programme on Optical Sensing using Advanced Photo-Induced Effects/OPTAPHIen
dc.relation.projectinfo:eu-repo/grantAgreement/ANR//ANR-11-EQPX-0016/FR//EXTRAen
dc.rights© 2022, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en
dc.subjectIII-V integration on Siliconen
dc.subjectSilicon photonicsen
dc.subjectPhotonic integrated circuitsen
dc.titleAnalysis of the optical coupling between 2.3 μm GaSb diode lasers and passive waveguides for monolithic integration on Si platformsen
dc.typeConference itemen
dc.typeproceedings-articleen
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