Analysis of the optical coupling between 2.3 μm GaSb diode lasers and passive waveguides for monolithic integration on Si platforms
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Accepted Version
Date
2022-12-14
Authors
Paparella, Michele
Monge Barlome, Laura
Rodriguez, Jean Baptiste
Cerutti, Laurent
Grande, Marco
O'Faolain, Liam
Tournie, Eric
Journal Title
Journal ISSN
Volume Title
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Published Version
Abstract
Although discrete lasers grown on silicon have been demonstrated, light coupling into on-chip passive waveguides remains to be properly studied. We investigate theoretically the optical coupling between 2.3 μm GaSb-based diode lasers (DLs) epitaxially grown on a Silicon photonic chip and the passive waveguides.
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Keywords
III-V integration on Silicon , Silicon photonics , Photonic integrated circuits
Citation
Paparella, M., Barlome, L. M., Rodriguez, J. B., Cerutti, L., Grande, M., O’Faolain, L. and Tournié, E. (2022) 'Analysis of the optical coupling between 2.3 μm GaSb diode lasers and passive waveguides for monolithic integration on Si platforms', 2022 IEEE Photonics Conference (IPC), Vancouver, BC, Canada, 13-17 November 2022, pp. 1-2. https://doi.org/10.1109/IPC53466.2022.9975716
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