Two mm-wave vector modulator active phase shifters with novel IQ generator in 28 nm FDSOI CMOS

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dc.contributor.authorPepe, Domenico
dc.contributor.authorZito, Domenico
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderSilansys Technologies Limited, Irelanden
dc.contributor.funderM/A-COM Technology Solutions, Irelanden
dc.contributor.funderAnalog Devicesen
dc.contributor.funderEnterprise Irelanden
dc.contributor.funderIDA Irelanden
dc.date.accessioned2021-08-23T11:03:56Z
dc.date.available2021-08-23T11:03:56Z
dc.date.issued2016-10-25
dc.description.abstractThis paper presents two 4-bit (16-phase) mm-wave vector modulator phase shifters exploiting a novel in-phase and quadrature signal generator that consists of a single-input double-output cascode amplifier incorporating a lumped-element coupled-line quadrature coupler. The two circuit implementations have been designed and fabricated in a 28 nm fully depleted silicon-on-insulator CMOS. The first (PS1) achieves a higher gain and the second (PS2) has a more compact area (reduced to about 50%). Each consumes 18 mA from a 1.2 V supply. PS1 exhibits an average gain of 2.3 dB at 87.4 GHz and B 3dB from 78.8 to 92.8 GHz; rms gain error of 1.68 dB at 87.4 GHz and <;2 dB in the B 3dB ; rms phase error of 9.4° at 87.4 GHz and <;11.9° in B 3dB ; S 11 <; -10.5 dB in B 3dB ; average P 1dB of -7 dBm; and average noise figure (NF) equal to 10.8 dB at 87 GHz. PS2 exhibits an average gain of 0.83 dB at 89.2 GHz and B 3dB from 80.2 to 96.8 GHz; rms gain error of 1.46 dB at 89.2 GHz and <;2 dB in B 3dB ; rms phase error of 11.2° at 89.2 GHz and <;11.9° in B 3dB ; S 11 <; -11.5 dB in B 3dB ; average P 1dB of -6 dBm; and average NF of 11.9 dB at 89 GHz.en
dc.description.sponsorshipEnterprise Ireland and IDA Ireland (Microelectronic Circuits Centre Ireland)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationPepe, D. and Zito, D. (2016) 'Two mm-wave vector modulator active phase shifters with novel IQ generator in 28 nm FDSOI CMOS', IEEE Journal of Solid-State Circuits, 52(2), pp. 344-356. doi: 10.1109/JSSC.2016.2605659en
dc.identifier.doi10.1109/JSSC.2016.2605659en
dc.identifier.eissn1558-173X
dc.identifier.endpage356en
dc.identifier.issn0018-9200
dc.identifier.issued2en
dc.identifier.journaltitleIEEE Journal of Solid-State Circuitsen
dc.identifier.startpage344en
dc.identifier.urihttps://hdl.handle.net/10468/11767
dc.identifier.volume52en
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.urihttps://ieeexplore.ieee.org/abstract/document/7676347
dc.rights© 2016, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en
dc.subjectPhase shiftersen
dc.subjectSilicon-on-insulatoren
dc.subjectSignal generatorsen
dc.subjectNoise measurementen
dc.subjectPhase modulationen
dc.subjectCouplersen
dc.subjectTransistorsen
dc.titleTwo mm-wave vector modulator active phase shifters with novel IQ generator in 28 nm FDSOI CMOSen
dc.typeArticle (peer-reviewed)en
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