Effect of intravalley acoustic phonon scattering on quantum transport in multigate silicon nanowire metal-oxide-semiconductor field-effect transistors

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2010
Authors
Akhavan, Nima Dehdashti
Afzalian, Aryan
Lee, Chi-Woo
Yan, Ran
Ferain, Isabelle
Razavi, Pedram
Yu, Ran
Fagas, Gíorgos
Colinge, Jean-Pierre
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AIP Publishing
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Abstract
In this paper we investigate the effects of intravalley acoustic phonon scattering on the quantum transport and on the electrical characteristics of multigate silicon nanowire metal-oxide-semiconductor field-effect transistors. We show that acoustic phonons cause a shift and broadening of the local DOS in the nanowire, which modifies the electrical characteristics of the device. The influence of scattering on off-state and on-state currents is investigated for different values of channel length. In the ballistic transport regime, source-to-drain tunneling current is predominant, whereas in the presence of acoustic phonons, diffusion becomes the dominant current transport mechanism. A three-dimensional quantum mechanical device simulator based on the nonequilibrium Green's function formalism in uncoupled-mode space has been developed to extract device parameters in the presence of electron-phonon interactions. Electron-phonon scattering is accounted for by adopting the self-consistent Born approximation and using the deformation potential theory. (C) 2010 American Institute of Physics. (doi: 10.1063/1.3457848)
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Ballistic transport , Nanowires , Electron scattering , Phonons , Silicon
Citation
Akhavan, N. D., Afzalian, A., Lee, C.-W., Yan, R., Ferain, I., Razavi, P., Yu, R., Fagas, G. and Colinge, J.-P. (2010) 'Effect of intravalley acoustic phonon scattering on quantum transport in multigate silicon nanowire metal-oxide-semiconductor field-effect transistors', Journal of Applied Physics, 108(3), 034510 (8pp). doi: 10.1063/1.3457848
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© 2010, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Akhavan, N. D., Afzalian, A., Lee, C.-W., Yan, R., Ferain, I., Razavi, P., Yu, R., Fagas, G. and Colinge, J.-P. (2010) 'Effect of intravalley acoustic phonon scattering on quantum transport in multigate silicon nanowire metal-oxide-semiconductor field-effect transistors', Journal of Applied Physics, 108(3), 034510 (8pp). doi: 10.1063/1.3457848 and may be found at http://aip.scitation.org/doi/10.1063/1.3457848