Effect of intravalley acoustic phonon scattering on quantum transport in multigate silicon nanowire metal-oxide-semiconductor field-effect transistors

dc.contributor.authorAkhavan, Nima Dehdashti
dc.contributor.authorAfzalian, Aryan
dc.contributor.authorLee, Chi-Woo
dc.contributor.authorYan, Ran
dc.contributor.authorFerain, Isabelle
dc.contributor.authorRazavi, Pedram
dc.contributor.authorYu, Ran
dc.contributor.authorFagas, Gíorgos
dc.contributor.authorColinge, Jean-Pierre
dc.contributor.funderScience Foundation Ireland
dc.contributor.funderEuropean Commission
dc.date.accessioned2017-09-20T10:06:35Z
dc.date.available2017-09-20T10:06:35Z
dc.date.issued2010
dc.description.abstractIn this paper we investigate the effects of intravalley acoustic phonon scattering on the quantum transport and on the electrical characteristics of multigate silicon nanowire metal-oxide-semiconductor field-effect transistors. We show that acoustic phonons cause a shift and broadening of the local DOS in the nanowire, which modifies the electrical characteristics of the device. The influence of scattering on off-state and on-state currents is investigated for different values of channel length. In the ballistic transport regime, source-to-drain tunneling current is predominant, whereas in the presence of acoustic phonons, diffusion becomes the dominant current transport mechanism. A three-dimensional quantum mechanical device simulator based on the nonequilibrium Green's function formalism in uncoupled-mode space has been developed to extract device parameters in the presence of electron-phonon interactions. Electron-phonon scattering is accounted for by adopting the self-consistent Born approximation and using the deformation potential theory. (C) 2010 American Institute of Physics. (doi: 10.1063/1.3457848)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid34510
dc.identifier.citationAkhavan, N. D., Afzalian, A., Lee, C.-W., Yan, R., Ferain, I., Razavi, P., Yu, R., Fagas, G. and Colinge, J.-P. (2010) 'Effect of intravalley acoustic phonon scattering on quantum transport in multigate silicon nanowire metal-oxide-semiconductor field-effect transistors', Journal of Applied Physics, 108(3), 034510 (8pp). doi: 10.1063/1.3457848en
dc.identifier.doi10.1063/1.3457848
dc.identifier.endpage8
dc.identifier.issn0021-8979
dc.identifier.issued3
dc.identifier.journaltitleJournal of Applied Physicsen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4744
dc.identifier.volume108
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::ICT/216373/EU/European platform for low-power applications on Silicon-on-Insulator Technology/EUROSOI+
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::ICT/216171/EU/Silicon-based nanostructures and nanodevices for long term nanoelectronics applications/NANOSIL
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Principal Investigator Programme (PI)/05/IN/I888/IE/Advanced Scalable Silicon-on-Insulator Devices for Beyond-End-of-Roadmap Semiconductor Technology/
dc.relation.urihttp://aip.scitation.org/doi/10.1063/1.3457848
dc.rights© 2010, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Akhavan, N. D., Afzalian, A., Lee, C.-W., Yan, R., Ferain, I., Razavi, P., Yu, R., Fagas, G. and Colinge, J.-P. (2010) 'Effect of intravalley acoustic phonon scattering on quantum transport in multigate silicon nanowire metal-oxide-semiconductor field-effect transistors', Journal of Applied Physics, 108(3), 034510 (8pp). doi: 10.1063/1.3457848 and may be found at http://aip.scitation.org/doi/10.1063/1.3457848en
dc.subjectBallistic transporten
dc.subjectNanowiresen
dc.subjectElectron scatteringen
dc.subjectPhononsen
dc.subjectSiliconen
dc.titleEffect of intravalley acoustic phonon scattering on quantum transport in multigate silicon nanowire metal-oxide-semiconductor field-effect transistorsen
dc.typeArticle (peer-reviewed)en
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