Semiconductor nanowire fabrication via bottom-up & top-down paradigms
| dc.contributor.advisor | Holmes, Justin D. | |
| dc.contributor.author | Hobbs, Richard G. | |
| dc.contributor.funder | Irish Research Council for Science Engineering and Technology | en |
| dc.date.accessioned | 2012-02-23T17:30:33Z | |
| dc.date.available | 2012-02-23T17:30:33Z | |
| dc.date.issued | 2011-10 | |
| dc.date.submitted | 2012-02-22 | |
| dc.description.abstract | Semiconductor nanowires are pseudo 1-D structures where the magnitude of the semiconducting material is confined to a length of less than 100 nm in two dimensions. Semiconductor nanowires have a vast range of potential applications, including electronic (logic devices, diodes), photonic (laser, photodetector), biological (sensors, drug delivery), energy (batteries, solar cells, thermoelectric generators), and magnetic (spintronic, memory) devices. Semiconductor nanowires can be fabricated by a range of methods which can be categorised into one of two paradigms, bottom-up or top-down. Bottom-up processes can be defined as those where structures are assembled from their sub-components in an additive fashion. Top-down fabrication strategies use sculpting or etching to carve structures from a larger piece of material in a subtractive fashion. This seminar will detail a number of novel routes to fabricate semiconductor nanowires by both bottom-up and top-down paradigms. Firstly, a novel bottom-up route to fabricate Ge nanowires with controlled diameter distributions in the sub-20 nm regime will be described. This route details nanowire synthesis and diameter control in the absence of a foreign seed metal catalyst. Additionally a top-down route to nanowire array fabrication will be detailed outlining the importance of surface chemistry in high-resolution electron beam lithography (EBL) using hydrogen silsesquioxane (HSQ) on Ge and Bi2Se3 surfaces. Finally, a process will be described for the directed self-assembly of a diblock copolymer (PS-b-PDMS) using an EBL defined template. This section will also detail a route toward selective template sidewall wetting of either block in the PS-b-PDMS system, through tailored functionalisation of the template and substrate surfaces. | en |
| dc.description.status | Not peer reviewed | en |
| dc.description.version | Accepted Version | en |
| dc.format.mimetype | application/pdf | en |
| dc.identifier.citation | Hobbs, R.G., 2011. Semiconductor nanowire fabrication via bottom-up & top-down paradigms. PhD Thesis, University College Cork. | en |
| dc.identifier.uri | https://hdl.handle.net/10468/535 | |
| dc.language.iso | en | en |
| dc.publisher | University College Cork | en |
| dc.rights | © 2011, Richard G. Hobbs | en |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/ | en |
| dc.subject | Semiconductor nanowires | en |
| dc.subject | Electron beam lithography | en |
| dc.subject | Nanofabrication | en |
| dc.subject.lcsh | Germanium | en |
| dc.subject.lcsh | Nanoelectronics | en |
| dc.subject.lcsh | Nanowires | en |
| dc.title | Semiconductor nanowire fabrication via bottom-up & top-down paradigms | en |
| dc.type | Doctoral thesis | en |
| dc.type.qualificationlevel | Doctoral | en |
| dc.type.qualificationname | PhD (Chemistry) | en |
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