Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD

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dc.contributor.authorSmith, Matthew D.
dc.contributor.authorTaylor, Elaine
dc.contributor.authorSadler, Thomas C.
dc.contributor.authorZubialevich, Vitaly Z.
dc.contributor.authorLorenz, Katharina
dc.contributor.authorLi, Haoning
dc.contributor.authorO'Connell, John
dc.contributor.authorAlves, Eduardo Jorge
dc.contributor.authorHolmes, Justin D.
dc.contributor.authorMartin, Robert W.
dc.contributor.authorParbrook, Peter J.
dc.contributor.funderIrish Research Council for Science, Engineering and Technologyen
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderEuropean Commissionen
dc.contributor.funderEuropean Space Agencyen
dc.contributor.funderFundação para a Ciência e a Tecnologiaen
dc.contributor.funderEngineering and Physical Sciences Research Councilen
dc.date.accessioned2016-02-10T18:09:58Z
dc.date.available2016-02-10T18:09:58Z
dc.date.issued2014-04-16
dc.date.updated2014-10-21T11:15:58Z
dc.description.abstractWe report on the consistent measurement of gallium incorporation in nominal InAlN layers using various complimentary techniques, underpinned by X-ray diffraction. Nominal InAlN layers with similar growth conditions were prepared, and the change in unintended Ga content in the group III sublattice ranged from ∼24% to ∼12% when the total reactor flow rate was increased from 8000 to 24 000 standard cubic centimetres per minute. Ultra-thin InAlN/GaN HEMT layers were grown in a clean reactor to minimize Ga auto-incorporation, and measured using X-ray photoelectron spectroscopy and secondary ion mass spectrometry. The implications of Ga incorporation in InAlN layers within optoelectronic and power devices is discussed.en
dc.description.sponsorshipScience Foundation Ireland (SFI (10\IN.1\I2993), (07\EN\E001A), (09-IN.1-I2602); Irish Research Council (studentship and postdoctoral fellowship); Irish Government Programme for Research in Third Level Institutions Cycle 4 and 5, National Development Plan 2007–2013; European Commission (European Regional Development Funds INSPIRE, TYFFANI); European Space Agency (ESA studentship co-funding); UK Engineering and Physical Sciences Research Council (EPSRC Grant (EP/I012591/1), (EP/I029141/1)); Portuguese Foundation for Science and Technology (FCT Portugal grants PTDC/FIS-NAN/0973/2012 and “Investigador FCT”)en
dc.description.statusPeer revieweden
dc.description.versionSubmitted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationSMITH, M. D., TAYLOR, E., SADLER, T. C., ZUBIALEVICH, V. Z., LORENZ, K., LI, H. N., O'CONNELL, J., ALVES, E., HOLMES, J. D., MARTIN, R. W. & PARBROOK, P. J. 2014. Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD. Journal of Materials Chemistry C, 2, 5787-5792.http://dx.doi.org/10.1039/C4TC00480Aen
dc.identifier.doi10.1039/c4tc00480a
dc.identifier.endpage5792en
dc.identifier.issn2050-7526
dc.identifier.issued29en
dc.identifier.journaltitleJournal of Materials Chemistry Cen
dc.identifier.startpage5787en
dc.identifier.urihttps://hdl.handle.net/10468/2282
dc.identifier.volume2en
dc.language.isoenen
dc.publisherThe Royal Society of Chemistryen
dc.relation.urihttp://pubs.rsc.org/en/content/articlepdf/2014/tc/c4tc00480a
dc.rights© The Royal Society of Chemistry 2014.en
dc.subjectGalliumen
dc.subjectSecondary ion mass spectrometryen
dc.subjectX ray diffractionen
dc.subjectX ray photoelectron spectroscopyen
dc.subjectEpilayers grownen
dc.subjectGa contenten
dc.subjectGroup IIIen
dc.subjectGrowth conditionsen
dc.subjectInAlN/GaN HEMTen
dc.subjectPower devicesen
dc.subjectSub-latticesen
dc.subjectUltra-thinen
dc.titleDetermination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVDen
dc.typeArticle (peer-reviewed)en
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