Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD
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Date
2014-04-16
Authors
Smith, Matthew D.
Taylor, Elaine
Sadler, Thomas C.
Zubialevich, Vitaly Z.
Lorenz, Katharina
Li, Haoning
O'Connell, John
Alves, Eduardo Jorge
Holmes, Justin D.
Martin, Robert W.
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Journal ISSN
Volume Title
Publisher
The Royal Society of Chemistry
Published Version
Abstract
We report on the consistent measurement of gallium incorporation in nominal InAlN layers using various complimentary techniques, underpinned by X-ray diffraction. Nominal InAlN layers with similar growth conditions were prepared, and the change in unintended Ga content in the group III sublattice ranged from ∼24% to ∼12% when the total reactor flow rate was increased from 8000 to 24 000 standard cubic centimetres per minute. Ultra-thin InAlN/GaN HEMT layers were grown in a clean reactor to minimize Ga auto-incorporation, and measured using X-ray photoelectron spectroscopy and secondary ion mass spectrometry. The implications of Ga incorporation in InAlN layers within optoelectronic and power devices is discussed.
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Keywords
Gallium , Secondary ion mass spectrometry , X ray diffraction , X ray photoelectron spectroscopy , Epilayers grown , Ga content , Group III , Growth conditions , InAlN/GaN HEMT , Power devices , Sub-lattices , Ultra-thin
Citation
SMITH, M. D., TAYLOR, E., SADLER, T. C., ZUBIALEVICH, V. Z., LORENZ, K., LI, H. N., O'CONNELL, J., ALVES, E., HOLMES, J. D., MARTIN, R. W. & PARBROOK, P. J. 2014. Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD. Journal of Materials Chemistry C, 2, 5787-5792.http://dx.doi.org/10.1039/C4TC00480A
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© The Royal Society of Chemistry 2014.