Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD

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Smith, Matthew D.
Taylor, Elaine
Sadler, Thomas C.
Zubialevich, Vitaly Z.
Lorenz, Katharina
Li, Haoning
O'Connell, John
Alves, Eduardo Jorge
Holmes, Justin D.
Martin, Robert W.
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The Royal Society of Chemistry
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We report on the consistent measurement of gallium incorporation in nominal InAlN layers using various complimentary techniques, underpinned by X-ray diffraction. Nominal InAlN layers with similar growth conditions were prepared, and the change in unintended Ga content in the group III sublattice ranged from ∼24% to ∼12% when the total reactor flow rate was increased from 8000 to 24 000 standard cubic centimetres per minute. Ultra-thin InAlN/GaN HEMT layers were grown in a clean reactor to minimize Ga auto-incorporation, and measured using X-ray photoelectron spectroscopy and secondary ion mass spectrometry. The implications of Ga incorporation in InAlN layers within optoelectronic and power devices is discussed.
Gallium , Secondary ion mass spectrometry , X ray diffraction , X ray photoelectron spectroscopy , Epilayers grown , Ga content , Group III , Growth conditions , InAlN/GaN HEMT , Power devices , Sub-lattices , Ultra-thin
SMITH, M. D., TAYLOR, E., SADLER, T. C., ZUBIALEVICH, V. Z., LORENZ, K., LI, H. N., O'CONNELL, J., ALVES, E., HOLMES, J. D., MARTIN, R. W. & PARBROOK, P. J. 2014. Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD. Journal of Materials Chemistry C, 2, 5787-5792.
© The Royal Society of Chemistry 2014.