Probing intrinsic transport properties of single metal nanowires: Direct-write contact formation using a focused ion beam

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dc.contributor.authorDe Marzi, Gianluca
dc.contributor.authorIacopino, Daniela
dc.contributor.authorQuinn, Aidan J.
dc.contributor.authorRedmond, Gareth
dc.contributor.funderEuropean Commission
dc.contributor.funderHigher Education Authority
dc.date.accessioned2017-07-12T09:11:17Z
dc.date.available2017-07-12T09:11:17Z
dc.date.issued2004-09
dc.description.abstractThe transport characteristics of 70-nm-diameter platinum nanowires (NWs), fabricated using a pore-templated electrodeposition process and individually contacted using a focused ion beam (FIB) method, are reported. This approach yields nanowire devices with low contact resistances (similar to400 Omega) and linear current-voltage characteristics for current densities up to 65 kA/cm(2). The intrinsic nanowire resistivity (33+/-5 muOmega cm) indicates significant contributions from surface- and grain-boundary scattering mechanisms. Fits to the temperature dependence of the intrinsic NW resistance confirm that grain-boundary scattering dominates surface scattering (by more than a factor of 2) at all temperatures. Our results demonstrate that FIB presents a rapid and flexible method for the formation of low-resistance ohmic contacts to individual metal nanowires, allowing intrinsic nanowire transport properties to be probed.en
dc.description.sponsorshipEuropean Commission (EU RTN project MicroNano (HPRN-CT-2000-00028)); Higher Education Authority (PRTLI Nanoscale Science and Technology Initiative)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationMarzi, G. D., Iacopino, D., Quinn, A. J. and Redmond, G. (2004) 'Probing intrinsic transport properties of single metal nanowires: Direct-write contact formation using a focused ion beam', Journal of Applied Physics, 96(6), pp. 3458-3462. doi: 10.1063/1.1779972en
dc.identifier.doi10.1063/1.1779972
dc.identifier.endpage3462
dc.identifier.issn0021-8979
dc.identifier.issued6
dc.identifier.journaltitleJournal of Applied Physicsen
dc.identifier.startpage3458
dc.identifier.urihttps://hdl.handle.net/10468/4233
dc.identifier.volume96
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.1779972
dc.rights© 2004 American Institute of Physics, This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Marzi, G. D., Iacopino, D., Quinn, A. J. and Redmond, G. (2004) 'Probing intrinsic transport properties of single metal nanowires: Direct-write contact formation using a focused ion beam', Journal of Applied Physics, 96(6), pp. 3458-3462 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.1779972en
dc.subjectInsulator-transitionen
dc.subjectConductivityen
dc.subjectPlatinumen
dc.subjectFilmsen
dc.subjectScatteringen
dc.subjectFocused ion beam technologyen
dc.subjectElectrical resistivityen
dc.subjectNanowiresen
dc.subjectSurface scatteringen
dc.subjectContact resistanceen
dc.titleProbing intrinsic transport properties of single metal nanowires: Direct-write contact formation using a focused ion beamen
dc.typeArticle (peer-reviewed)en
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