Investigating the mechanical properties of GeSn nanowires.

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dc.contributor.authorKosmaca, Jelena
dc.contributor.authorMeija, Raimonds
dc.contributor.authorAntsov, Mikk
dc.contributor.authorKunakova, Gunta
dc.contributor.authorSonders, Raitis
dc.contributor.authorIatsunskyi, Igor
dc.contributor.authorCoy, Emerson
dc.contributor.authorDoherty, Jessica
dc.contributor.authorBiswas, Subhajit
dc.contributor.authorHolmes, Justin D.
dc.contributor.authorErts, Donats
dc.contributor.funderEuropean Regional Development Funden
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderIrish Research Councilen
dc.date.accessioned2019-07-22T11:39:12Z
dc.date.available2019-07-22T11:39:12Z
dc.date.issued2019-07-10
dc.date.updated2019-07-19T07:43:52Z
dc.description.abstractGermanium tin (GeSn) has been proposed as a promising material for electronic and optical applications due to the formation of a direct band-gap at a Sn content >7 at%. Furthermore, the ability to manipulate the properties of GeSn at the nanoscale will further permit the realisation of advanced mechanical devices. Here we report for the first time the mechanical properties of GeSn nanowires (7.1–9.7 at% Sn) and assess their suitability as nanoelectromechanical (NEM) switches. Electron microscopy analysis showed the nanowires to be single crystalline, with surfaces covered by a thin native amorphous oxide layer. Mechanical resonance and bending tests at different boundary conditions were used to obtain size-dependent Young's moduli and to relate the mechanical characteristics of the alloy nanowires to geometry and Sn incorporation. The mechanical properties of the GeSn nanowires make them highly promising for applications in next generation NEM devices.en
dc.description.sponsorshipEuropean Regional Development Fund (project no. 1.1.1.1/16/A/256, “Creation of nanoelectromechanical switches”); Irish Research Council (Grant No: GOIPG/2015/2772)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationKosmaca, J., Meija, R., Antsov, M., Kunakova, G., Sondors, R., Iatsunskyi, I., Coy, E., Doherty, J., Biswas, S., Holmes, J. D. and Erts, D. (2019) 'Investigating the mechanical properties of GeSn nanowires', Nanoscale, 11(28), pp. 13612-13619. doi: 10.1039/c9nr02740hen
dc.identifier.doi10.1039/c9nr02740hen
dc.identifier.endpage13619en
dc.identifier.issn2040-3372
dc.identifier.issued28en
dc.identifier.journaltitleNanoscaleen
dc.identifier.startpage13612en
dc.identifier.urihttps://hdl.handle.net/10468/8214
dc.identifier.volume11en
dc.language.isoenen
dc.publisherRoyal Society of Chemistry (RSC)en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Investigator Programme/14/IA/2513/IE/Silicon Compatible, Direct Band-Gap Nanowire Materials For Beyond-CMOS Devices/en
dc.relation.urihttps://pubs.rsc.org/en/content/articlelanding/2019/nr/c9nr02740h#!divAbstract
dc.rights© The Royal Society of Chemistry 2019en
dc.subjectGermanium tin alloyen
dc.subjectNanowireen
dc.subjectSize dependenceen
dc.subjectMechanical behaviouren
dc.titleInvestigating the mechanical properties of GeSn nanowires.en
dc.typeArticle (peer-reviewed)en
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