µ-Transfer printing of GaSb-based gain elements for integrated external cavity lasers at 2 µm range

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Date
2023
Authors
Tuorila, Heidi
Viheriälä, Jukka
Arafat, Yeasir
Koivusalo, Eero
Hilska, Joonas
Atar, Fatih Bilge
Gunning, Fatima C. Garcia
Corbett, Brian
Guina, Mircea
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Publisher
Optica Publishing Group
Published Version
https://doi.org/10.1364/CLEO_SI.2023.STu4P.7
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Abstract
Micro transfer printing of GaSb-based gain elements transferred to silicon photonics platform is reported for the first time. Using a distributed Bragg reflector fabricated utilizing silicon-on-insulator technology and the GaSb integrated gain chip, a single frequency external cavity laser emitting at around 1.96 µm is demonstrated.
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Keywords
Micro transfer printing , GaSb-based gain elements , Silicon photonics platform
Citation
Tuorila, H., Viheriälä, J., Arafat, Y., Koivusalo, E., Hilska, J., Atar, F. B., Gunning, F., Corbett, B. and Guina, M. (2023) 'µ-Transfer printing of GaSb-based gain elements for integrated external cavity lasers at 2 µm range', CLEO 2023, San Jose, CA, United States, 7–12 May. Technical Digest Series (Optica Publishing Group, 2023), paper STu4P.7 (2pp). https://doi.org/10.1364/CLEO_SI.2023.STu4P.7
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https://hdl.handle.net/10468/15370
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Tyndall National Institute - Conference Items
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© 2023, The Authors. Published by Optica Publishing Group.