µ-Transfer printing of GaSb-based gain elements for integrated external cavity lasers at 2 µm range

dc.contributor.authorTuorila, Heidien
dc.contributor.authorViheriälä, Jukkaen
dc.contributor.authorArafat, Yeasiren
dc.contributor.authorKoivusalo, Eeroen
dc.contributor.authorHilska, Joonasen
dc.contributor.authorAtar, Fatih Bilgeen
dc.contributor.authorGunning, Fatima C. Garcia en
dc.contributor.authorCorbett, Brianen
dc.contributor.authorGuina, Mirceaen
dc.date.accessioned2024-01-15T15:09:55Z
dc.date.available2024-01-15T15:09:55Z
dc.date.issued2023en
dc.description.abstractMicro transfer printing of GaSb-based gain elements transferred to silicon photonics platform is reported for the first time. Using a distributed Bragg reflector fabricated utilizing silicon-on-insulator technology and the GaSb integrated gain chip, a single frequency external cavity laser emitting at around 1.96 µm is demonstrated.en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleidSTu4P.7en
dc.identifier.citationTuorila, H., Viheriälä, J., Arafat, Y., Koivusalo, E., Hilska, J., Atar, F. B., Gunning, F., Corbett, B. and Guina, M. (2023) 'µ-Transfer printing of GaSb-based gain elements for integrated external cavity lasers at 2 µm range', CLEO 2023, San Jose, CA, United States, 7–12 May. Technical Digest Series (Optica Publishing Group, 2023), paper STu4P.7 (2pp). https://doi.org/10.1364/CLEO_SI.2023.STu4P.7en
dc.identifier.doihttps://doi.org/10.1364/CLEO_SI.2023.STu4P.7en
dc.identifier.endpage2en
dc.identifier.isbn978-1-957171-25-8en
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/15370
dc.language.isoenen
dc.publisherOptica Publishing Groupen
dc.relation.ispartofCLEO 2023, San Jose, CA, United States, 7–12 Mayen
dc.rights© 2023, The Authors. Published by Optica Publishing Group.en
dc.subjectMicro transfer printingen
dc.subjectGaSb-based gain elementsen
dc.subjectSilicon photonics platformen
dc.titleµ-Transfer printing of GaSb-based gain elements for integrated external cavity lasers at 2 µm rangeen
dc.typeConference itemen
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