Crystal defect topography of Stranski-Krastanow quantum dots by atomic force microscopy
Sadler, Thomas C.
Mereni, Lorenzo O.
Parbrook, Peter J.
We demonstrate a technique to monitor the defect density in capped quantum dot (QD) structures by performing an atomic force microscopy (AFM) of the final surface. Using this method we are able to correlate their density with the optical properties of the dot structures grown at different temperatures. Parallel transmission electron microscopy analysis shows that the AFM features are directly correlated with the density of stacking faults that originate from abnormally large dots. The technique is rapid and noninvasive making it an ideal diagnostic tool for optimizing the parameters of practical QD-based devices. (C) 2010 American Institute of Physics. (doi:10.1063/1.3514237)
Chemical-vapor-deposition , Room-temperature , Quantum dots , Atomic force microscopy , Transmission electron microscopy , Crystal defects , Semiconductor growth
Gradkowski, K., Sadler, T. C., Mereni, L. O., Dimastrodonato, V., Parbrook, P. J., Huyet, G. and Pelucchi, E. (2010) 'Crystal defect topography of Stranski–Krastanow quantum dots by atomic force microscopy', Applied Physics Letters, 97(19), pp. 191106. doi: 10.1063/1.3514237
© 2010 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Gradkowski, K., Sadler, T. C., Mereni, L. O., Dimastrodonato, V., Parbrook, P. J., Huyet, G. and Pelucchi, E. (2010) 'Crystal defect topography of Stranski–Krastanow quantum dots by atomic force microscopy', Applied Physics Letters, 97(19), pp. 191106 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3514237