Crystal defect topography of Stranski-Krastanow quantum dots by atomic force microscopy

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dc.contributor.authorGradkowski, Kamil
dc.contributor.authorSadler, Thomas C.
dc.contributor.authorMereni, Lorenzo O.
dc.contributor.authorDimastrodonato, Valeria
dc.contributor.authorParbrook, Peter J.
dc.contributor.authorHuyet, Guillaume
dc.contributor.authorPelucchi, Emanuele
dc.contributor.funderScience Foundation Ireland
dc.contributor.funderEngineering and Physical Sciences Research Council
dc.contributor.funderHigher Education Authority
dc.date.accessioned2017-07-28T11:04:41Z
dc.date.available2017-07-28T11:04:41Z
dc.date.issued2010
dc.description.abstractWe demonstrate a technique to monitor the defect density in capped quantum dot (QD) structures by performing an atomic force microscopy (AFM) of the final surface. Using this method we are able to correlate their density with the optical properties of the dot structures grown at different temperatures. Parallel transmission electron microscopy analysis shows that the AFM features are directly correlated with the density of stacking faults that originate from abnormally large dots. The technique is rapid and noninvasive making it an ideal diagnostic tool for optimizing the parameters of practical QD-based devices. (C) 2010 American Institute of Physics. (doi:10.1063/1.3514237)en
dc.description.sponsorshipHigher Education Authority (INSPIRE programme, funded by the Irish Government’s Programme for Research in Third Level Institutions, Cycle 4, National Development Plan 2007-2013); Science Foundation Ireland (Grant No. 05/IN.1/I25; SFI Engineering Professorships scheme 07/EN/E001a.); Engineering and Physical Sciences Research Council (EPSRC PhD-Plus Fellowship)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid191106
dc.identifier.citationGradkowski, K., Sadler, T. C., Mereni, L. O., Dimastrodonato, V., Parbrook, P. J., Huyet, G. and Pelucchi, E. (2010) 'Crystal defect topography of Stranski–Krastanow quantum dots by atomic force microscopy', Applied Physics Letters, 97(19), pp. 191106. doi: 10.1063/1.3514237en
dc.identifier.doi10.1063/1.3514237
dc.identifier.endpage3
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued19
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4328
dc.identifier.volume97
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.3514237
dc.rights© 2010 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Gradkowski, K., Sadler, T. C., Mereni, L. O., Dimastrodonato, V., Parbrook, P. J., Huyet, G. and Pelucchi, E. (2010) 'Crystal defect topography of Stranski–Krastanow quantum dots by atomic force microscopy', Applied Physics Letters, 97(19), pp. 191106 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3514237en
dc.subjectChemical-vapor-depositionen
dc.subjectRoom-temperatureen
dc.subjectQuantum dotsen
dc.subjectAtomic force microscopyen
dc.subjectTransmission electron microscopyen
dc.subjectCrystal defectsen
dc.subjectSemiconductor growthen
dc.titleCrystal defect topography of Stranski-Krastanow quantum dots by atomic force microscopyen
dc.typeArticle (peer-reviewed)en
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