Composition dependence of photoluminescence properties of InxAl1-xN/AlGaN quantum wells

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Zubialevich, Vitaly Z.
Alam, Shahab N
Li, Haoning
Parbrook, Peter J.
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A series of InAlN/AlGaN five quantum well (QW) heterostructures was prepared by metal-organic vapour phase epitaxy to investigate their photoluminescence (PL) properties as a function of indium content in QWs at aluminium content in barriers fixed at 59%. In addition to the expected redshift of the emission spectrum, a strong rise of PL efficiency was observed with increasing indium content from 12.5 to 18%. Use of a higher indium content leads to a further redshift but also to a sudden and sharp degradation of PL efficiency. Reasons for the observed behaviour are discussed in detail, which raise the possibility of a transition to a type II band lineup in the InAlN-AlGaN system.
InAlN , AlInN , Quantum well , Photoluminescence , Type II band lineup
Zubialevich, V. Z., Alam, S. N., Li, H. N. and Parbrook, P. J. (2016) 'Composition dependence of photoluminescence properties of InxAl1−xN/AlGaN quantum wells', Journal of Physics D: Applied Physics, 49(38), 385105 (8 pp). doi: 10.1088/0022-3727/49/38/385105
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