Composition dependence of photoluminescence properties of InxAl1-xN/AlGaN quantum wells

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dc.contributor.authorZubialevich, Vitaly Z.
dc.contributor.authorAlam, Shahab N
dc.contributor.authorLi, Haoning
dc.contributor.authorParbrook, Peter J.
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderHigher Education Authorityen
dc.contributor.funderMinistry of Science Research and Technologyen
dc.date.accessioned2021-03-09T16:20:23Z
dc.date.available2021-03-09T16:20:23Z
dc.date.issued2016-08-31
dc.date.updated2021-03-05T13:49:09Z
dc.description.abstractA series of InAlN/AlGaN five quantum well (QW) heterostructures was prepared by metal-organic vapour phase epitaxy to investigate their photoluminescence (PL) properties as a function of indium content in QWs at aluminium content in barriers fixed at 59%. In addition to the expected redshift of the emission spectrum, a strong rise of PL efficiency was observed with increasing indium content from 12.5 to 18%. Use of a higher indium content leads to a further redshift but also to a sudden and sharp degradation of PL efficiency. Reasons for the observed behaviour are discussed in detail, which raise the possibility of a transition to a type II band lineup in the InAlN-AlGaN system.en
dc.description.sponsorshipScience Foundation Ireland ((SFI under grant No. SFI/10/IN.1/I2993; Higher Education Authority (Irish Higher Education Authority Programme for Research in Third Level Institutions Cycles 4 and 5 via the INSPIRE and TYFFANI projects), (SFI Engineering Professorship scheme (SFI/07/EN/E001A)); Iranian Ministry of Science, Research and Technology (studentship funding)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid385105en
dc.identifier.citationZubialevich, V. Z., Alam, S. N., Li, H. N. and Parbrook, P. J. (2016) 'Composition dependence of photoluminescence properties of InxAl1−xN/AlGaN quantum wells', Journal of Physics D: Applied Physics, 49(38), 385105 (8 pp). doi: 10.1088/0022-3727/49/38/385105en
dc.identifier.doi10.1088/0022-3727/49/38/385105en
dc.identifier.endpage8en
dc.identifier.issn0022-3727
dc.identifier.journaltitleJournal of Physics D: Applied Physicsen
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/11127
dc.identifier.volume49en
dc.language.isoenen
dc.publisherIOP Publishingen
dc.relation.urihttps://iopscience.iop.org/article/10.1088/0022-3727/49/38/385105
dc.rights© 2016 IOP Publishing Ltd. This is the Accepted Manuscript version of an article accepted for publication in Journal of Physics D: Applied Physics. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/0022-3727/49/38/385105en
dc.subjectInAlNen
dc.subjectAlInNen
dc.subjectQuantum wellen
dc.subjectPhotoluminescenceen
dc.subjectType II band lineupen
dc.titleComposition dependence of photoluminescence properties of InxAl1-xN/AlGaN quantum wellsen
dc.typeArticle (peer-reviewed)en
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