Functionalisation and characterisation of bulk and two-dimensional semiconductors

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van Druenen, Maart
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University College Cork
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The continual scaling of semiconductor devices has created a high demand for new techniques and materials that allow the advancement Moore’s Law: the number of transistors on a chip doubles every 12-18 months. The move from planar to three-dimensional (3D) transistor geometries requires compatible doping technologies that meet the demands of Moore’s Law. Monolayer doping (MLD) has shown promise in achieving uniformly doped regions compared to currently implemented techniques. However, the continuous use of silicon (Si) as a device material to satisfy Moore’s law is becoming challenging and new materials are currently being investigated to potentially replace Si. One of these materials is black phosphorus (BP) which displays a high carrier mobility making it a viable candidate for some electronic devices, although the ambient stability of BP is a key challenge, which makes its processing difficult and functionalisation has been employed as a potential protection strategy to enhance its oxidation resistance. Additionally, antimonene (AM) has been proposed as a device material that displays a superior ambient stability compared to BP. This thesis aims to address some of the challenges faced when preparing three materials, Si, BP and AM, for device applications in order to satisfy Moore’s Law. Functionalisation of SiO2 surfaces was used for monolayer doping which resulted in tuning of the electrical properties of Si. The functionalisation of BP was used to enhance its ambient stability while the liquid exfoliation of AM was also investigated.
Silicon , Antimonene , Monolayer doping , Two-dimensional materials , Black phosphorus
van Druenen, M. K. 2019. Functionalisation and characterisation of bulk and two-dimensional semiconductors. PhD Thesis, University College Cork.
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