Functionalisation and characterisation of bulk and two-dimensional semiconductors

dc.check.embargoformatApply the embargo to both hard bound copy and e-thesis (If you have submitted an e-thesis and a hard bound thesis and want to embargo both)en
dc.check.entireThesisEntire Thesis Restricted
dc.check.opt-outNot applicableen
dc.check.reasonThis thesis is due for publication or the author is actively seeking to publish this materialen
dc.contributor.advisorHolmes, Justinen
dc.contributor.authorvan Druenen, Maart
dc.contributor.funderIrish Research Councilen
dc.date.accessioned2020-05-13T09:43:21Z
dc.date.issued2019
dc.date.submitted2019
dc.description.abstractThe continual scaling of semiconductor devices has created a high demand for new techniques and materials that allow the advancement Moore’s Law: the number of transistors on a chip doubles every 12-18 months. The move from planar to three-dimensional (3D) transistor geometries requires compatible doping technologies that meet the demands of Moore’s Law. Monolayer doping (MLD) has shown promise in achieving uniformly doped regions compared to currently implemented techniques. However, the continuous use of silicon (Si) as a device material to satisfy Moore’s law is becoming challenging and new materials are currently being investigated to potentially replace Si. One of these materials is black phosphorus (BP) which displays a high carrier mobility making it a viable candidate for some electronic devices, although the ambient stability of BP is a key challenge, which makes its processing difficult and functionalisation has been employed as a potential protection strategy to enhance its oxidation resistance. Additionally, antimonene (AM) has been proposed as a device material that displays a superior ambient stability compared to BP. This thesis aims to address some of the challenges faced when preparing three materials, Si, BP and AM, for device applications in order to satisfy Moore’s Law. Functionalisation of SiO2 surfaces was used for monolayer doping which resulted in tuning of the electrical properties of Si. The functionalisation of BP was used to enhance its ambient stability while the liquid exfoliation of AM was also investigated.en
dc.description.statusNot peer revieweden
dc.description.versionAccepted Version
dc.format.mimetypeapplication/pdfen
dc.identifier.citationvan Druenen, M. K. 2019. Functionalisation and characterisation of bulk and two-dimensional semiconductors. PhD Thesis, University College Cork.en
dc.identifier.endpage267en
dc.identifier.urihttps://hdl.handle.net/10468/9941
dc.language.isoenen
dc.publisherUniversity College Corken
dc.relation.projectIrish Research Council (GOIPG/2015/2933)en
dc.rights© 2019, Maart Kate van Druenen.en
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/en
dc.subjectSiliconen
dc.subjectAntimoneneen
dc.subjectMonolayer dopingen
dc.subjectTwo-dimensional materialsen
dc.subjectBlack phosphorusen
dc.thesis.opt-outfalse
dc.titleFunctionalisation and characterisation of bulk and two-dimensional semiconductorsen
dc.typeDoctoral thesisen
dc.type.qualificationlevelDoctoralen
dc.type.qualificationnamePhDen
ucc.workflow.supervisorj.holmes@ucc.ie
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