Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition

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dc.contributor.authorLong, Rathnait D.
dc.contributor.authorO'Connor, Éamon
dc.contributor.authorNewcomb, Simon B.
dc.contributor.authorMonaghan, Scott
dc.contributor.authorCherkaoui, Karim
dc.contributor.authorCasey, P.
dc.contributor.authorHughes, Gregory
dc.contributor.authorThomas, Kevin K.
dc.contributor.authorChalvet, Francis N.
dc.contributor.authorPovey, Ian M.
dc.contributor.authorPemble, Martyn E.
dc.contributor.authorHurley, Paul K.
dc.contributor.funderScience Foundation Ireland
dc.contributor.funderIrish Research Council for Science, Engineering and Technology
dc.date.accessioned2017-09-20T10:06:35Z
dc.date.available2017-09-20T10:06:35Z
dc.date.issued2009
dc.description.abstractIn this work results are presented on the structural analysis, chemical composition, and interface state densities of HfO2 thin films deposited by atomic layer deposition (ALD) from Hf[N(CH3)(2)](4) and H2O on In0.53Ga0.47As/InP substrates. The structural and chemical properties are investigated using high resolution cross-sectional transmission electron microscopy and electron energy loss spectroscopy. HfO2 films (3-15 nm) deposited on In0.53Ga0.47As are studied following a range of surface treatments including in situ treatment of the In0.53Ga0.47As surface by H2S exposure at 50-350 degrees C immediately following the metal organic vapor phase epitaxy growth of the In0.53Ga0.47As layer, ex situ treatment with (NH4)(2)S, and deposition on the native oxides of In0.53Ga0.47As with no surface treatment. The structural analysis indicates that the In0.53Ga0.47As surface preparation prior to HfO2 film deposition influences the thickness of the HfO2 film and the interlayer oxide. The complete interfacial self-cleaning of the In(0.53)Gas(0.47)As native oxides is not observed using an ALD process based on the Hf[N(CH3)(2)](4) precursor and H2O. Elemental profiling of the HfO2/In0.53Ga0.47As interface region by electron energy loss spectroscopy reveals an interface oxide layer of 1-2 nm in thickness, which consists primarily of Ga oxides. Using a conductance method approximation, peak interface state densities in the range from 6 x 10(12) to 2 x 10(13) cm(-2) eV(-1) are estimated depending on the surface preparation. (C) 2009 American Institute of Physics. [doi:10.1063/1.3243234]en
dc.description.sponsorshipIrish Research Council for Science, Engineering, and Technology; Science Foundation Ireland [05/IN/1751]en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid84508
dc.identifier.citationLong, R. D., O’Connor, É., Newcomb, S. B., Monaghan, S., Cherkaoui, K., Casey, P., Hughes, G., Thomas, K. K., Chalvet, F., Povey, I. M., Pemble, M. E. and Hurley, P. K. (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition', Journal of Applied Physics, 106(8), 084508 (7pp). doi: 10.1063/1.3243234en
dc.identifier.doi10.1063/1.3243234
dc.identifier.endpage7
dc.identifier.issn0021-8979
dc.identifier.issued8
dc.identifier.journaltitleJournal of Applied Physicsen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4750
dc.identifier.volume106
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/10.1063/1.3243234
dc.rights© 2009, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Long, R. D., O’Connor, É., Newcomb, S. B., Monaghan, S., Cherkaoui, K., Casey, P., Hughes, G., Thomas, K. K., Chalvet, F., Povey, I. M., Pemble, M. E. and Hurley, P. K. (2009) 'Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition', Journal of Applied Physics, 106(8), 084508 (7pp). doi: 10.1063/1.3243234 and may be found at http://aip.scitation.org/doi/10.1063/1.3243234en
dc.subjectAtomic layer depositionen
dc.subjectTransmission electron microscopyen
dc.subjectInterface structureen
dc.subjectIII-V semiconductorsen
dc.subjectElectron energy loss spectroscopyen
dc.titleStructural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer depositionen
dc.typeArticle (peer-reviewed)en
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