Characterizing stress in ultrathin silicon wafers

Simple item page
dc.contributor.authorPaul, Indrajit
dc.contributor.authorMajeed, Bivragh
dc.contributor.authorRazeeb, Kafil M.
dc.contributor.authorBarton, John
dc.date.accessioned2017-07-28T13:20:07Z
dc.date.available2017-07-28T13:20:07Z
dc.date.issued2006
dc.description.abstractThe aim of this letter is to calculate the mechanical grinding induced bow and stress in ultrathin silicon wafers. The reverse leakage current of a p-n junction diode fabricated on a 4 in. silicon wafer was measured for wafers thinned to various thicknesses. A correlation with the residual stress was obtained through band gap narrowing effect. The analytical results were compared with experimental bow measurements using a laser profiler. The bow in 50 mu m thick wafer was found to be less than 2 mm using the current grinding process. (c) 2006 American Institute of Physics. (DOI:10.1063/1.2336212)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid73506
dc.identifier.citationPaul, I., Majeed, B., Razeeb, K. M. and Barton, J. (2006) 'Characterizing stress in ultrathin silicon wafers', Applied Physics Letters, 89(7), pp. 073506. doi: 10.1063/1.2336212en
dc.identifier.doi10.1063/1.2336212
dc.identifier.endpage3
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued7
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4387
dc.identifier.volume89
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.2336212
dc.rights© 2006 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Paul, I., Majeed, B., Razeeb, K. M. and Barton, J. (2006) 'Characterizing stress in ultrathin silicon wafers', Applied Physics Letters, 89(7), pp. 073506 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.2336212en
dc.subjectSiliconen
dc.subjectBand gapen
dc.subjectLeakage currentsen
dc.subjectValence bandsen
dc.subjectHydrostaticsen
dc.titleCharacterizing stress in ultrathin silicon wafersen
dc.typeArticle (peer-reviewed)en
Files
Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
3363.pdf
Size:
363.29 KB
Format:
Adobe Portable Document Format
Description:
Published Version
Download
Collections
Tyndall National Institute - Journal Articles