Data transmission at 1.3 µm using hybrid integrated silicon interposer and GalnNAs/GaAs electroabsorption modulator

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dc.contributor.authorGuina, Mircea
dc.contributor.authorSheehan, Robert
dc.contributor.authorIsoaho, Riku
dc.contributor.authorViheriälä, Jukka
dc.contributor.authorHarjanne, Mikko
dc.contributor.authorMalacarne, Antonio
dc.contributor.authorFalconi, Fabio
dc.contributor.authorAalto, Timo
dc.contributor.authorPeters, Frank H.
dc.contributor.funderSeventh Framework Programmeen
dc.date.accessioned2021-10-06T08:13:13Z
dc.date.available2021-10-06T08:13:13Z
dc.date.issued2018-11-15
dc.date.updated2021-10-06T07:58:57Z
dc.description.abstractTransmission of NRZ data at 12.5 Gbit/s is demonstrated using a hybrid integrated silicon photonics optical interconnect. The interconnect comprises a dilute nitride quantum well electroabsorption modulator on GaAs substrate, which is optically coupled to large core Si waveguide.en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationGuina, M., Sheehan, R., Isoaho, R., ; Viheriälä, J., Harjanne, M., Malacarne, A., Falconi, F., Aalto, T. and Peters, F. H. (2018) 'Data transmission at 1.3 µm using hybrid integrated silicon interposer and GalnNAs/GaAs electroabsorption modulator', 2018 European Conference on Optical Communication (ECOC), Rome, Italy, 23 - 27 September, pp. 1-3. doi: 10.1109/ECOC.2018.8535166en
dc.identifier.doi10.1109/ECOC.2018.8535166en
dc.identifier.endpage3en
dc.identifier.isbn978-1-5386-4862-9
dc.identifier.isbn978-1-5386-4861-2
dc.identifier.isbn978-1-5386-4863-6
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/12055
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::ICT/619806/EU/Revolutionary Advances in Photonics Integration Being Applied for Optical Communication/RAPIDOen
dc.rights© 2018, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en
dc.subjectOptical waveguidesen
dc.subjectSiliconen
dc.subjectModulationen
dc.subjectPhotonicsen
dc.subjectOptical interconnectionsen
dc.subjectGallium arsenideen
dc.subjectSubstratesen
dc.titleData transmission at 1.3 µm using hybrid integrated silicon interposer and GalnNAs/GaAs electroabsorption modulatoren
dc.typeConference itemen
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