"In situ" hard mask materials: a new methodology for creation of vertical silicon nanopillar and nanowire arrays

Simple item page
dc.contributor.authorGhoshal, Tandra
dc.contributor.authorSenthamaraikannan, Ramsankar
dc.contributor.authorShaw, Matthew T.
dc.contributor.authorHolmes, Justin D.
dc.contributor.authorMorris, Michael A.
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2018-09-14T08:52:12Z
dc.date.available2018-09-14T08:52:12Z
dc.date.issued2012-12
dc.date.updated2018-08-07T12:58:25Z
dc.description.abstractA novel, simple and in situ hard mask technology that can be used to develop high aspect ratio silicon nanopillar and nanowire features on a substrate surface is demonstrated. The technique combines a block copolymer inclusion method that generates nanodot arrays on substrate and an inductively coupled plasma (ICP) etch processing step to fabricate Si nanopillar and nanowire arrays. Iron oxide was found to be an excellent resistant mask over silicon under the selected etching conditions. Features of a very high aspect ratio can be created by this method. The nanopillars have uniform diameter and smooth sidewalls throughout their entire length. The diameter (15–27 nm) and length of the nanopillars can be tuned easily. Different spectroscopic and microscopic techniques were used to examine the morphology and size, surface composition and crystallinity of the resultant patterns. The methodology developed may have important technological applications and provide an inexpensive manufacturing route to nanodimensioned topographical patterns. The high aspect ratio of the features may have importance in the area of photonics and the photoluminescence properties are found to be similar to those of surface-oxidized silicon nanocrystals and porous silicon.en
dc.description.sponsorshipScience Foundation Ireland (Strategic Research Cluster FORME grant, 09/SIRG/I1621 grant and the CSET CRANN grant)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationGhoshal, T., Senthamaraikannan, R., Shaw, M. T., Holmes, J. D. and Morris, M. A. (2012) '“In situ” hard mask materials: a new methodology for creation of vertical silicon nanopillar and nanowire arrays', Nanoscale, 4(24), pp. 7743-7750. doi: 10.1039/C2NR32693Ken
dc.identifier.doi10.1039/C2NR32693K
dc.identifier.endpage7750en
dc.identifier.issn2040-3364
dc.identifier.journaltitleNanoscaleen
dc.identifier.startpage7743en
dc.identifier.urihttps://hdl.handle.net/10468/6783
dc.identifier.volume4en
dc.language.isoenen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Starting Investigator Research Grant (SIRG)/09/SIRG/I1621/IE/Tuning surface and dopant properties of silicon and germanium nanowires for high performance nanowire-based field-effect transistors/en
dc.relation.urihttp://pubs.rsc.org/en/Content/ArticleLanding/2012/NR/c2nr32693k
dc.rights© Royal Society of Chemistry 2012en
dc.subjectNanowiresen
dc.subjectAspect ratioen
dc.subjectBlock copolymersen
dc.subjectEtchingen
dc.subjectInductively coupled plasmaen
dc.subjectIron oxidesen
dc.subjectPorous siliconen
dc.subjectSiliconen
dc.subjectSilicon oxidesen
dc.title"In situ" hard mask materials: a new methodology for creation of vertical silicon nanopillar and nanowire arraysen
dc.typeArticle (peer-reviewed)en
Files
Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
manuscript_Ghoshal_nanoscale_revised.pdf
Size:
1.3 MB
Format:
Adobe Portable Document Format
Description:
Accepted version
Download
License bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
license.txt
Size:
2.71 KB
Format:
Item-specific license agreed upon to submission
Description:
Download
Collections
Chemistry - Journal Articles
Tyndall National Institute - Journal Articles