Low temperature germanium to silicon direct wafer bonding using free radical exposure

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dc.contributor.authorByun, Ki Yeol
dc.contributor.authorFerain, Isabelle
dc.contributor.authorFleming, Peter G.
dc.contributor.authorMorris, Michael A.
dc.contributor.authorGoorsky, M. S.
dc.contributor.authorColinge, Cindy
dc.contributor.funderScience Foundation Ireland
dc.date.accessioned2017-07-28T11:22:09Z
dc.date.available2017-07-28T11:22:09Z
dc.date.issued2010
dc.description.abstractA low temperature germanium (Ge) to silicon (Si) wafer bonding method was demonstrated by in situ radical activation bonding in vacuum. In order to gain further insight into the bonding mechanism, the Ge surface chemistry after either oxygen or nitrogen radical activation was analyzed by means of angle-resolved x-ray photoelectron spectroscopy. After low temperature direct bonding of Ge to Si followed by annealing at 200 and 300 degrees C, advanced imaging techniques were used to characterize the bonded interface. (C) 2010 American Institute of Physics. (doi: 10.1063/1.3360201)en
dc.description.sponsorshipScience Foundation Ireland (Grant Nos. 07/IN/I937 and 08/W.1/I2597)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid102110
dc.identifier.citationByun, K. Y., Ferain, I., Fleming, P., Morris, M., Goorsky, M. and Colinge, C. (2010) 'Low temperature germanium to silicon direct wafer bonding using free radical exposure', Applied Physics Letters, 96(10), pp. 102110. doi: 10.1063/1.3360201en
dc.identifier.doi10.1063/1.3360201
dc.identifier.endpage3
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued10
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4344
dc.identifier.volume96
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.3360201
dc.rights© 2010 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Byun, K. Y., Ferain, I., Fleming, P., Morris, M., Goorsky, M. and Colinge, C. (2010) 'Low temperature germanium to silicon direct wafer bonding using free radical exposure', Applied Physics Letters, 96(10), pp. 102110 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3360201en
dc.subjectActivationen
dc.subjectSubstrateen
dc.subjectGermaniumen
dc.subjectElemental semiconductorsen
dc.subjectAnnealingen
dc.subjectInterface structureen
dc.subjectBuried interfacesen
dc.titleLow temperature germanium to silicon direct wafer bonding using free radical exposureen
dc.typeArticle (peer-reviewed)en
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