Theory and optimisation of 1.3 and 1.55 μm (Al)InGaAs metamorphic quantum well lasers

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dc.contributor.authorBroderick, Christopher A.
dc.contributor.authorBogusevschi, Silviu
dc.contributor.authorO'Reilly, Eoin P.
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderEngineering and Physical Sciences Research Councilen
dc.date.accessioned2016-11-09T16:37:13Z
dc.date.available2016-11-09T16:37:13Z
dc.date.issued2016-07
dc.date.updated2016-11-03T22:21:07Z
dc.description.abstractThe use of InGaAs metamorphic buffer layers (MBLs) to facilitate the growth of lattice-mismatched heterostructures constitutes an attractive approach to developing long-wavelength semiconductor lasers on GaAs substrates, since they offer the improved carrier and optical confinement associated with GaAs-based materials. We present a theoretical study of GaAs-based 1.3 and 1.55 μm (Al)InGaAs quantum well (QW) lasers grown on InGaAs MBLs. We demonstrate that optimised 1.3 μm metamorphic devices offer low threshold current densities and high differential gain, which compare favourably with InP-based devices. Overall, our analysis highlights and quantifies the potential of metamorphic QWs for the development of GaAs-based long-wavelength semiconductor lasers, and also provides guidelines for the design of optimised devices.en
dc.description.sponsorshipScience Foundation Ireland (Irish Photonic Integration Centre (I-PIC, project nos. 12/RC/2276, 10/IN.1/I2994)); Engineering and Physical Sciences Research Council (project no. EP/K029665/1)en
dc.description.statusNot peer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationC. A. Broderick, S. Bogusevschi and E. P. O'Reilly, "Theory and optimisation of 1.3 and 1.55 μm (Al)InGaAs metamorphic quantum well lasers," 2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Sydney, NSW, 2016, pp. 19-20. doi: 10.1109/NUSOD.2016.7546993en
dc.identifier.doi10.1109/NUSOD.2016.7546993
dc.identifier.endpage20en
dc.identifier.isbn978-1-4673-8603-6
dc.identifier.isbn978-1-4673-8604-3
dc.identifier.issn2158-3242
dc.identifier.startpage19en
dc.identifier.urihttps://hdl.handle.net/10468/3262
dc.language.isoenen
dc.publisherIEEEen
dc.relation.ispartof2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
dc.relation.urihttp://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7546993&isnumber=7546886
dc.rights© 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en
dc.subjectAluminium compoundsen
dc.subjectCurrent densityen
dc.subjectGallium arsenideen
dc.subjectIndium compoundsen
dc.subjectOptical design techniquesen
dc.subjectOptical fabricationen
dc.subjectOptical materialsen
dc.subjectQuantum well lasersen
dc.subject(Al)InGaAsen
dc.subjectGaAsen
dc.subjectGaAs-based (Al)InGaAs metamorphic quantum well lasersen
dc.subjectGaAs-based long-wavelength semiconductor lasersen
dc.subjectHigh differential gainen
dc.subjectLattice-mismatched heterostructure growthen
dc.subjectLow threshold current densitiesen
dc.subjectOptical confinementen
dc.subjectWavelength 1.3 mumen
dc.subjectWavelength 1.55 mumen
dc.subjectIndium gallium arsenideen
dc.subjectLaser theoryen
dc.subjectMetalsen
dc.subjectPerformance evaluationen
dc.subjectSemiconductor lasersen
dc.subjectSubstratesen
dc.titleTheory and optimisation of 1.3 and 1.55 μm (Al)InGaAs metamorphic quantum well lasersen
dc.typeConference itemen
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