AsH3 gas-phase ex situ doping 3D silicon structures

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dc.contributor.authorDuffy, Ray
dc.contributor.authorThomas, Kevin K.
dc.contributor.authorGalluccio, Emmanuele
dc.contributor.authorMirabelli, Gioele
dc.contributor.authorSultan, Maeva
dc.contributor.authorKennedy, Noel
dc.contributor.authorPetkov, Nikolay
dc.contributor.authorMaxwell, Graeme
dc.contributor.authorHydes, Alan
dc.contributor.authorO'Connell, Dan
dc.contributor.authorLyons, Colin
dc.contributor.authorSheehan, Brendan
dc.contributor.authorSchmidt, Michael
dc.contributor.authorHolmes, Justin D.
dc.contributor.authorHurley, Paul K.
dc.contributor.authorPelucchi, Emanuele
dc.contributor.authorConnolly, James
dc.contributor.authorHatem, Chris
dc.contributor.authorLong, Brenda
dc.contributor.funderEnterprise Irelanden
dc.contributor.funderEuropean Regional Development Funden
dc.contributor.funderEuropean Commissionen
dc.date.accessioned2018-08-02T14:51:30Z
dc.date.available2018-08-02T14:51:30Z
dc.date.issued2018-07-26
dc.date.updated2018-08-02T09:53:55Z
dc.description.abstractDopant incorporation in Si can be done in situ during epitaxial growth, or ex situ for localised material modification from a variety of sources including ion, solid, liquid, or gas. Gas-phase doping has the advantage that it does not require a thin film deposition, it is more effective at entering tight spaces than a liquid, and it is less damaging and more conformal than a beam-line ion implant. In this work, we apply arsine (AsH3) gas at approximately atmospheric pressures in order to n-type dope three-dimensional (3D) Si device structures. It was observed that the gas-phase doping can be either corrosive or gentle to thin-body Si depending on the process conditions. Initial doping processes caused damage to the Si due to etching, but after process optimisation, the structural integrity of the Si nanostructures could be maintained successfully. Moreover, it was noted that evaluating doping processes entirely on planar Si surfaces can be misleading: processes which appear promising initially may not be transferrable to non-planar thin-body structures like fins or nanowires, due to unwanted Si etching. Overall, we found that gas-phase doping with AsH3 could provide >1020 cm−3 electrically active As concentrations. This high As incorporation makes gas-phase doping very attractive for future gate-all-around devices, where the space between features will decline with continued transistor scaling.en
dc.description.sponsorshipEnterprise Ireland (Project Nos. IP-2015-0368 and IP-2017-0605); European Commission (European Union through the European Regional Development Fund (ERDF) under Ireland’s European Structural and Investment Funds Programmes 2014-2020)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationDuffy, R., Thomas, K., Galluccio, E. Mirabelli, G., Sultan, M., Kennedy, N., Petkov, N., Maxwell, G., Hydes, A., O'Connell, D., Lyons, C., Sheehan, B., Schmidt, M., Holmes, J. D., Hurley, P. K., Pelucchi, E., Connolly, J., Hatem, C. and Long, B. (2018) 'AsH3 gas-phase ex situ doping 3D silicon structures', Journal of Applied Physics, 124(4), 045703 (8pp). doi: 10.1063/1.5034213en
dc.identifier.doi10.1063/1.5034213
dc.identifier.endpage045703(8)en
dc.identifier.issn0021-8979
dc.identifier.issn1089-7550
dc.identifier.issued4en
dc.identifier.journaltitleJournal of Applied Physicsen
dc.identifier.startpage045703(1)en
dc.identifier.urihttps://hdl.handle.net/10468/6570
dc.identifier.volume124en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttps://aip.scitation.org/doi/10.1063/1.5034213
dc.rights© 2018, AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Journal of Applied Physics 2018 124:4 and may be found at https://aip.scitation.org/doi/abs/10.1063/1.5034213en
dc.subjectDopingen
dc.subjectNanowiresen
dc.subjectBipolar transistorsen
dc.subjectTransition state theoryen
dc.subjectCorrosionen
dc.titleAsH3 gas-phase ex situ doping 3D silicon structuresen
dc.typeArticle (peer-reviewed)en
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