Broadband 5Gb/s optical RAM cell over the C-band

Pappas, C.; Moschos, T.; Mourgias-Alexandris, G.; Alexoudi, T.; Vagionas, C.; Gradkowski, Kamil; Nudds, Noreen; O'Brien, Peter; Miliou, A.; Pleros, N.

Broadband 5Gb/s optical RAM cell over the C-band

Files

Broadband_5Gb_s_Optical_RAM_Cell_over_the_C-band.pdf(5.68 MB)

Published Version

Date

2021-10-29

Authors

Pappas, C.

Moschos, T.

Mourgias-Alexandris, G.

Alexoudi, T.

Vagionas, C.

Gradkowski, Kamil

Nudds, Noreen

O'Brien, Peter

Miliou, A.

Pleros, N.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Abstract

A broadband optical RAM cell comprising a monolithic InP Flip-Flop and a Random Access Gate is experimentally presented with at least 5 Gb/s error-free operation and less than 4.5dB power penalty across the whole C-band.

Keywords

Optical memories , Optics in computing , Integrated optics devices

Citation

Pappas, C., Moschos, T., Mourgias-Alexandris, G., Alexoudi , T., Vagionas, C. Gradkowski, K., Nudds, N., O'Brien, P., Miliou, A. and Pleros, N. (2021) 'Broadband 5Gb/s optical RAM cell over the C-band', 2021 Conference on Lasers and Electro-Optics (CLEO), San Jose, California, United States, 9-14 May, STu1G.4 (2pp). Available at: https://ieeexplore.ieee.org/abstract/document/9572802 (Accessed: 10 December 2021)