Design and analysis of a photon counting system using covered single photon avalanche photodiode

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dc.contributor.authorDeng, Shijie
dc.contributor.authorLi, Xiang
dc.contributor.authorMorrison, Alan P.
dc.contributor.authorChen, Ming
dc.contributor.authorDeng, Hongchang
dc.contributor.authorTeng, Chuanxin
dc.contributor.authorLiu, Houquan
dc.contributor.authorXu, Ronghui
dc.contributor.authorCheng, Yu
dc.contributor.authorYuan, Libo
dc.contributor.funderNational Natural Science Foundation of Chinaen
dc.contributor.funderGuangxi Projecten
dc.contributor.funderGuangxi Key Laboratory of Automatic Detection Technology and Instrument Foundationen
dc.contributor.funderGuilin University of Electronic Technologyen
dc.date.accessioned2022-03-08T13:49:00Z
dc.date.available2022-03-08T13:49:00Z
dc.date.issued2022-03-02
dc.date.updated2022-03-08T13:32:26Z
dc.description.abstractA photon counting system using covered single photon avalanche diode (SPAD) based on a standard IC process (0.18 μm) is designed and analysed in this work. The SPAD is formed using the medium voltage (MV) doping layers of the process. To reduce the dark count rate (DCR) in the SPAD, a shaded SPAD with the same structure is fabricated on the same chip which is covered by a metal layer and only providing DCR for the DCR correction. This DCR provided by the shaded SPAD can be also used for the real-time on chip monitoring of some other parameters such as temperature, breakdown voltage and afterpulsing probability. Experimental results show that the SPAD developed is able to detect the visible light from 450 nm to 850 nm with a 35 % peak photon detection probability achieved at around 550 nm with bias voltage of 16 V (excess voltage of 3 V). A timing jitter of 176 ps is measured with an excess voltage of 3 V. The dark count rate in the SPAD tested is about 1.38 cps/μm2 with excess bias voltage of 1 V and 14.62 cps/μm2 with the excess bias voltage of 3 V without the DCR correction. Results also show that a reduction of more than 85 % in the DCR (background noise) can be achieved when the DCR correction is applied resulting in a DCR of 1.68 cps/μm2 with excess bias voltage of 3 V. By monitoring the DCR of the shaded SPAD, the breakdown voltage and temperature of other on chip SPAD can be measured. The potential usefulness of the afterpulsing probability monitoring using the shaded SPAD and the crosstalk probability between SPADs on the chip are analyzed. In addition, the effects of process variations on the SPAD performance is investigated by testing 10 chips with the same SPADs fabricated and potential method is proposed for alleviating the process variations in the SPAD arrays.en
dc.description.sponsorshipNational Natural Science Foundation of China (Grants 61964005; 62005057; 61965006; 61965009); Guangxi Project (Grants AB21076005; 2019GXNSFBA245057; AD18281092; AD19245064; 2018GXNSFAA138092; 2019GXNSFAA245024); Guangxi Key Laboratory of Automatic Detection Technology and Instrument Foundation (Grant YQ20102); Guilin University of Electronic Technology (Grant 2020YCXS088)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid7002409
dc.identifier.citationDeng, S., Li, X., Morrison, A., Chen, M., Deng, H., Teng, C., Liu, H., Xu, Ro., Cheng, Y. and Yuan, L. (2022) 'Design and analysis of a photon counting system using covered single photon avalanche photodiode', IEEE Transactions on Instrumentation and Measurement, 71, 7002409 (9pp). doi: 10.1109/TIM.2022.3155748en
dc.identifier.doi10.1109/TIM.2022.3155748en
dc.identifier.eissn1557-9662
dc.identifier.endpage9
dc.identifier.issn0018-9456
dc.identifier.journaltitleIEEE Transactions on Instrumentation and Measurementen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/12810
dc.identifier.volume71
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.rights© 2022, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en
dc.subjectDark count rate correctionen
dc.subjectTemperature monitoringen
dc.subjectBreakdown voltageen
dc.subjectAfterpulsing effecten
dc.subjectSPAD arraysen
dc.titleDesign and analysis of a photon counting system using covered single photon avalanche photodiodeen
dc.typeArticle (peer-reviewed)en
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