Nanoporous domains in n-InP anodized in KOH

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dc.contributor.authorLynch, Robert P.
dc.contributor.authorO'Dwyer, Colm
dc.contributor.authorSutton, David
dc.contributor.authorNewcomb, Simon B.
dc.contributor.authorBuckley, D. Noel
dc.date.accessioned2018-06-14T11:45:14Z
dc.date.available2018-06-14T11:45:14Z
dc.date.issued2007-05
dc.date.updated2018-06-11T10:15:42Z
dc.description.abstractA model of porous structure growth in semiconductors based on propagation of pores along the <111>A directions has been developed. The model predicts that pores originating at a surface pit lead to porous domains with a truncated tetrahedral shape. SEM and TEM were used to examine cross- sections of n-InP electrodes in the early stages of anodization in aqueous KOH and showed that pores propagate along the <111>A directions. Domain outlines observed in both TEM and SEM images are in excellent agreement with the model. The model is further supported by plan-view TEM and surface SEM images. Quantitative measurements of aspect ratios of the observed domains are in excellent agreement with the predicted values.en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationLynch, R. P., O'Dwyer, C., Sutton, D., Newcomb, S. B. and Buckley, D. N. (2007) 'Nanoporous Domains in n-InP Anodized in KOH', ECS Transactions, 6(2), pp. 355-366. doi: 10.1149/1.2731203en
dc.identifier.doi10.1149/1.2731203
dc.identifier.endpage366en
dc.identifier.issn1938-5862
dc.identifier.journaltitleElectrochemical Society Transactionsen
dc.identifier.startpage355en
dc.identifier.urihttps://hdl.handle.net/10468/6305
dc.identifier.volume6en
dc.language.isoenen
dc.publisherElectrochemical Societyen
dc.relation.ispartof46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting
dc.relation.urihttp://ecst.ecsdl.org/content/6/2/355.abstract
dc.rights© 2007 ECS - The Electrochemical Societyen
dc.subject(1 1 0) surfaceen
dc.subjectAnodizationen
dc.subjectCompound semiconductor (CS)en
dc.subjectCross sections (CS)en
dc.subjectEarly stagesen
dc.subjectElectrochemical Society (ECS)en
dc.subjectInternational symposiumen
dc.subjectNano porousen
dc.subjectPorous domainsen
dc.subjectPorous structuresen
dc.subjectPredicted valuesen
dc.subjectQuantitative measurementsen
dc.subjectScanning electron microscopy (SEM) imagesen
dc.subjectSEM and TEMen
dc.subjectSolution interfacesen
dc.titleNanoporous domains in n-InP anodized in KOHen
dc.typeArticle (peer-reviewed)en
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