Electron beam lithography assisted high-resolution pattern generation

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dc.check.chapterOfThesis1,4,5
dc.check.embargoformatE-thesis on CORA onlyen
dc.check.opt-outNot applicableen
dc.check.reasonThis thesis is due for publication or the author is actively seeking to publish this materialen
dc.contributor.advisorHolmes, Justin D.en
dc.contributor.authorGangnaik, Anushka S.
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2016-04-08T08:59:53Z
dc.date.issued2015
dc.date.submitted2015
dc.description.abstractThis thesis details the top-down fabrication of nanostructures on Si and Ge substrates by electron beam lithography (EBL). Various polymeric resist materials were used to create nanopatterns by EBL and Chapter 1 discusses the development characteristics of these resists. Chapter 3 describes the processing parameters, resolution and topographical and structural changes of a new EBL resist known as ‘SML’. A comparison between SML and the standard resists PMMA and ZEP520A was undertaken to determine the suitability of SML as an EBL resist. It was established that SML is capable of high-resolution patterning and showed good pattern transfer capabilities. Germanium is a desirable material for use in microelectronic applications due to a number of superior qualities over silicon. EBL patterning of Ge with high-resolution hydrogen silsesquioxane (HSQ) resist is however difficult due to the presence of native surface oxides. Thus, to combat this problem a new technique for passivating Ge surfaces prior to EBL processes is detailed in Chapter 4. The surface passivation was carried out using simple acids like citric acid and acetic acid. The acids were gentle on the surface and enabled the formation of high-resolution arrays of Ge nanowires using HSQ resist. Chapter 5 details the directed self-assembly (DSA) of block copolymers (BCPs) on EBL patterned Si and, for the very first time, Ge surfaces. DSA of BCPs on template substrates is a promising technology for high volume and cost effective nanofabrication. The BCP employed for this study was poly (styrene-b-ethylene oxide) and the substrates were pre-defined by HSQ templates produced by EBL. The DSA technique resulted into pattern rectification (ordering in BCP) and in pattern multiplication within smaller areas.en
dc.description.sponsorshipScience Foundation Ireland ("Novel Nanowire Structures for Devices” project - Grant agreement no. 09-IN1-I2602)en
dc.description.statusNot peer revieweden
dc.description.versionAccepted Version
dc.format.mimetypeapplication/pdfen
dc.identifier.citationGangnaik, A. 2015. Electron beam lithography assisted high-resolution pattern generation. PhD Thesis, University College Cork.en
dc.identifier.endpage183en
dc.identifier.urihttps://hdl.handle.net/10468/2441
dc.language.isoenen
dc.publisherUniversity College Corken
dc.rights© 2015, Anushka Gangnaik.en
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/en
dc.subjectElectron beam lithographyen
dc.subjectNanochemistryen
dc.subjectNanofabricationen
dc.subjectBlock coploymersen
dc.subjectNanowiresen
dc.subjectEBL resistsen
dc.thesis.opt-outfalse
dc.titleElectron beam lithography assisted high-resolution pattern generationen
dc.typeDoctoral thesisen
dc.type.qualificationlevelDoctoralen
dc.type.qualificationnamePhD (Science)en
ucc.workflow.supervisorj.holmes@ucc.ie
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