Dense GaN nanocolumn arrays by hybrid top-down-regrow approach using nanosphere lithography
dc.contributor.author | Zubialevich, Vitaly Z. | |
dc.contributor.author | Pampili, Pietro | |
dc.contributor.author | McLaren, M. | |
dc.contributor.author | Arredondo-Arechavala, Miryam | |
dc.contributor.author | Sabui, G. | |
dc.contributor.author | Shen, Z. J. | |
dc.contributor.author | Parbrook, Peter J. | |
dc.contributor.funder | Department for Employment and Learning, Northern Ireland | en |
dc.contributor.funder | Science Foundation Ireland | en |
dc.contributor.funder | National Science Foundation | en |
dc.date.accessioned | 2019-03-19T10:11:41Z | |
dc.date.available | 2019-03-19T10:11:41Z | |
dc.date.issued | 2018-07 | |
dc.date.updated | 2019-03-19T10:00:00Z | |
dc.description.abstract | A comprehensive description of a procedure to form dense locally ordered 2D arrays of vertically aligned hexagonal in section GaN nanocolumns (NCs) without height deviations will be presented. Particular focus will be given for the preparation of silica nanosphere hard masks, dry etching to form GaN NCs, wet etching to modify NC shape, thermal annealing and regrowth to recover non-polar m-plane facets, improve NC crystal quality and array fill factor. | en |
dc.description.sponsorship | Department for Employment and Learning, Northern Ireland (Grant no. USI 058); National Science Foundation (Grant no. EECS-1407540); Science Foundation Ireland (Engineering Professorship Scheme SFI/07/EN/ E001A) | en |
dc.description.status | Peer reviewed | en |
dc.description.uri | http://ieeenano18.org/ | en |
dc.description.version | Accepted Version | en |
dc.format.mimetype | application/pdf | en |
dc.identifier.citation | Zubialevich, V. Z., Pampili, P., McLaren, M., Arredondo-Arechavala, M., Sabui, G., Shen, Z. J. and Parbrook, P. J. (2018) 'Dense GaN nanocolumn arrays by hybrid top-down-regrow approach using nanosphere lithography', 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO), Cork, Ireland, 23-26 July. doi:10.1109/NANO.2018.8626265 | en |
dc.identifier.doi | 10.1109/NANO.2018.8626265 | |
dc.identifier.endpage | 3 | en |
dc.identifier.isbn | 978-1-5386-5336-4 | |
dc.identifier.isbn | 978-1-5386-5337-1 | |
dc.identifier.issn | 1944-9380 | |
dc.identifier.issn | 1944-9399 | |
dc.identifier.startpage | 1 | en |
dc.identifier.uri | https://hdl.handle.net/10468/7638 | |
dc.language.iso | en | en |
dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) | en |
dc.relation.ispartof | 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO) | |
dc.relation.project | info:eu-repo/grantAgreement/SFI/SFI US Ireland R&D Partnership/13/US/I2860/IE/US-Ireland Collaborative Research on Nano-GaN Power Electronic Devices/ | en |
dc.relation.uri | https://ieeexplore.ieee.org/document/8626265 | |
dc.rights | © 2018, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | en |
dc.subject | Annealing | en |
dc.subject | Gallium compounds | en |
dc.subject | III-V semiconductors | en |
dc.subject | Masks | en |
dc.subject | Nanolithography | en |
dc.subject | Nanostructured materials | en |
dc.subject | Semiconductor growth | en |
dc.subject | Wide band gap semiconductors | en |
dc.subject | Dense nanocolumn arrays | en |
dc.subject | Hybrid top-down-regrow approach | en |
dc.subject | Dense locally ordered 2D arrays | en |
dc.subject | Thermal annealing | en |
dc.subject | Nonpolar m-plane facets | en |
dc.subject | NC crystal quality | en |
dc.subject | Array fill factor | en |
dc.subject | Wet etching | en |
dc.subject | Dry etching | en |
dc.subject | Silica nanosphere hard masks | en |
dc.subject | Height deviations | en |
dc.subject | Nanocolumns | en |
dc.subject | Nanosphere lithography | en |
dc.subject | GaN | en |
dc.subject | SiO2 | en |
dc.subject | Gallium nitride | en |
dc.subject | Surface treatment | en |
dc.subject | MOCVD | en |
dc.subject | Shape | en |
dc.subject | Epitaxial growth | en |
dc.subject | Optics | en |
dc.title | Dense GaN nanocolumn arrays by hybrid top-down-regrow approach using nanosphere lithography | en |
dc.type | Conference item | en |