Dense GaN nanocolumn arrays by hybrid top-down-regrow approach using nanosphere lithography

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dc.contributor.authorZubialevich, Vitaly Z.
dc.contributor.authorPampili, Pietro
dc.contributor.authorMcLaren, M.
dc.contributor.authorArredondo-Arechavala, Miryam
dc.contributor.authorSabui, G.
dc.contributor.authorShen, Z. J.
dc.contributor.authorParbrook, Peter J.
dc.contributor.funderDepartment for Employment and Learning, Northern Irelanden
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderNational Science Foundationen
dc.date.accessioned2019-03-19T10:11:41Z
dc.date.available2019-03-19T10:11:41Z
dc.date.issued2018-07
dc.date.updated2019-03-19T10:00:00Z
dc.description.abstractA comprehensive description of a procedure to form dense locally ordered 2D arrays of vertically aligned hexagonal in section GaN nanocolumns (NCs) without height deviations will be presented. Particular focus will be given for the preparation of silica nanosphere hard masks, dry etching to form GaN NCs, wet etching to modify NC shape, thermal annealing and regrowth to recover non-polar m-plane facets, improve NC crystal quality and array fill factor.en
dc.description.sponsorshipDepartment for Employment and Learning, Northern Ireland (Grant no. USI 058); National Science Foundation (Grant no. EECS-1407540); Science Foundation Ireland (Engineering Professorship Scheme SFI/07/EN/ E001A)en
dc.description.statusPeer revieweden
dc.description.urihttp://ieeenano18.org/en
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationZubialevich, V. Z., Pampili, P., McLaren, M., Arredondo-Arechavala, M., Sabui, G., Shen, Z. J. and Parbrook, P. J. (2018) 'Dense GaN nanocolumn arrays by hybrid top-down-regrow approach using nanosphere lithography', 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO), Cork, Ireland, 23-26 July. doi:10.1109/NANO.2018.8626265en
dc.identifier.doi10.1109/NANO.2018.8626265
dc.identifier.endpage3en
dc.identifier.isbn978-1-5386-5336-4
dc.identifier.isbn978-1-5386-5337-1
dc.identifier.issn1944-9380
dc.identifier.issn1944-9399
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/7638
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.ispartof2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI US Ireland R&D Partnership/13/US/I2860/IE/US-Ireland Collaborative Research on Nano-GaN Power Electronic Devices/en
dc.relation.urihttps://ieeexplore.ieee.org/document/8626265
dc.rights© 2018, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en
dc.subjectAnnealingen
dc.subjectGallium compoundsen
dc.subjectIII-V semiconductorsen
dc.subjectMasksen
dc.subjectNanolithographyen
dc.subjectNanostructured materialsen
dc.subjectSemiconductor growthen
dc.subjectWide band gap semiconductorsen
dc.subjectDense nanocolumn arraysen
dc.subjectHybrid top-down-regrow approachen
dc.subjectDense locally ordered 2D arraysen
dc.subjectThermal annealingen
dc.subjectNonpolar m-plane facetsen
dc.subjectNC crystal qualityen
dc.subjectArray fill factoren
dc.subjectWet etchingen
dc.subjectDry etchingen
dc.subjectSilica nanosphere hard masksen
dc.subjectHeight deviationsen
dc.subjectNanocolumnsen
dc.subjectNanosphere lithographyen
dc.subjectGaNen
dc.subjectSiO2en
dc.subjectGallium nitrideen
dc.subjectSurface treatmenten
dc.subjectMOCVDen
dc.subjectShapeen
dc.subjectEpitaxial growthen
dc.subjectOpticsen
dc.titleDense GaN nanocolumn arrays by hybrid top-down-regrow approach using nanosphere lithographyen
dc.typeConference itemen
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