Design of 3.3 and 4.2 μm mid-infrared metamorphic quantum well light-emitting diodes

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dc.contributor.authorArkani, Reza
dc.contributor.authorBroderick, Christopher A.
dc.contributor.authorO'Reilly, Eoin P.
dc.contributor.funderHorizon 2020en
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderNational University of Irelanden
dc.date.accessioned2019-02-08T09:53:46Z
dc.date.available2019-02-08T09:53:46Z
dc.date.issued2018-12-13
dc.date.updated2019-02-08T09:43:24Z
dc.description.abstractThe use of Al z In 1-z As metamorphic buffer layers to facilitate the growth of lattice-mismatched InN y (As 1-x Sb x ) 1-y quantum wells on GaAs or InAs substrates has recently been demonstrated to constitute an attractive approach to developing light-emitting devices at application-rich mid-infrared wavelengths. However, little information is available regarding the fundamental properties of this newly established platform. We present a theoretical investigation and optimisation of the properties and performance of InN y (As 1-x Sb x ) 1-y /Al z In 1-z As structures designed to emit at 3.3 and 4.2 μm. We quantify the design space available to these structures in terms of the ability to engineer and optimise the optoelectronic properties, and quantify the potential of metamorphic InN y (As 1-x Sb x ) 1-y structures for the development of mid-infrared light emitters, providing guidelines for the design of optimised light-emitting diodes.en
dc.description.sponsorshipNational University of Ireland (Post-Doctoral Fellowship in the Sciences)en
dc.description.statusNot peer revieweden
dc.description.urihttps://www.nusod.org/2018/en
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationArkani, R., Broderick, C. A. and O'Reilly, E. P. (2018) 'Design of 3.3 and 4.2 μm mid-infrared metamorphic quantum well light-emitting diodes', 2018 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Hong Kong, China, 5-9 November, pp. 119-120. doi:10.1109/NUSOD.2018.8570223en
dc.identifier.doi10.1109/NUSOD.2018.8570223
dc.identifier.endpage120en
dc.identifier.isbn978-1-5386-5599-3
dc.identifier.isbn978-1-5386-5600-6
dc.identifier.issn2158-3242
dc.identifier.issn2158-3234
dc.identifier.startpage119en
dc.identifier.urihttps://hdl.handle.net/10468/7464
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.ispartof2018 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
dc.relation.projectinfo:eu-repo/grantAgreement/EC/H2020::MSCA-ITN-ETN/641899/EU/Postgraduate Research on Dilute Metamorphic Nanostructures and Metamaterials in Semiconductor Photonics/PROMISen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Investigator Programme/15/IA/3082/IE/Multiscale Simulation and Analysis of emerging Group IV and III-V Semiconductor Materials and Devices/en
dc.relation.urihttps://ieeexplore.ieee.org/document/8570223
dc.rights© 2018, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en
dc.subjectAluminium compoundsen
dc.subjectBuffer layersen
dc.subjectIII-V semiconductorsen
dc.subjectIndium compoundsen
dc.subjectLight emitting diodesen
dc.subjectSemiconductor growthen
dc.subjectSemiconductor quantum wellsen
dc.subjectMetamorphic structuresen
dc.subjectMid-infrared metamorphic quantum wellen
dc.subjectLattice-mismatched quantum wellsen
dc.subjectInAs substratesen
dc.subjectStructure propertiesen
dc.subjectOptoelectronic propertiesen
dc.subjectMetamorphic buffer layersen
dc.subjectWavelength 3.3 mumen
dc.subjectWavelength 4.2 mumen
dc.subjectInAsen
dc.subjectInNy(As1-xSbx)1-y-AlzIn1-zAsen
dc.subjectMetalsen
dc.subjectStrainen
dc.subjectStimulated emissionen
dc.subjectRadiative recombinationen
dc.subjectGallium arsenideen
dc.subjectOptimizationen
dc.titleDesign of 3.3 and 4.2 μm mid-infrared metamorphic quantum well light-emitting diodesen
dc.typeConference itemen
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