Fabrication of ultra-dense sub-10 nm in-plane Si nanowire arrays by using a novel block copolymer method: optical properties

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dc.contributor.authorGhoshal, Tandra
dc.contributor.authorNtaras, Christos
dc.contributor.authorO'Connell, John
dc.contributor.authorShaw, Matthew T.
dc.contributor.authorHolmes, Justin D.
dc.contributor.authorAvgeropoulos, Apostolos
dc.contributor.authorMorris, Michael A.
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderSemiconductor Research Corporationen
dc.date.accessioned2018-09-07T15:05:43Z
dc.date.available2018-09-07T15:05:43Z
dc.date.issued2015-12-22
dc.date.updated2018-08-07T12:44:14Z
dc.description.abstractThe use of a low-χ, symmetric block copolymer as an alternative to the high-χ systems currently being translated towards industrial silicon chip manufacture has been demonstrated. Here, the methodology for generating on-chip, etch resistant masks and subsequent pattern transfer to the substrate using ultra-small dimension, lamellar, microphase separated polystyrene-b-poly(ethylene oxide) (PS-b-PEO) block copolymer (BCP) is described. Well-controlled films of a perpendicularly oriented lamellar pattern with a domain size of ∼8 nm were achieved through amplification of an effective interaction parameter (χeff) of the BCP system. The self-assembled films were used as ‘templates’ for the generation of inorganic oxides nanowire arrays through selective metal ion inclusion and subsequent processing. Inclusion is a significant challenge because the lamellar systems have less chemical and mechanical robustness than the cylinder forming materials. The oxide nanowires of uniform diameter (∼8 nm) were isolated and their structure mimics the original BCP nanopatterns. We demonstrate that these lamellar phase iron oxide nanowire arrays could be used as a resist mask to fabricate densely packed, identical ordered, good fidelity silicon nanowire arrays on the substrate. Possible applications of the materials prepared are discussed, in particular, in the area of photonics and photoluminescence where the properties are found to be similar to those of surface-oxidized silicon nanocrystals and porous silicon.en
dc.description.sponsorshipSemiconductor Research Corporation (SRC grant 2013-OJ-2444)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationGhoshal, T., Ntaras, C., O'Connell, J., Shaw, M. T., Holmes, J. D., Avgeropoulos, A. and Morris, M. A. (2016) 'Fabrication of ultra-dense sub-10 nm in-plane Si nanowire arrays by using a novel block copolymer method: optical properties', Nanoscale, 8(4), pp. 2177-2187. doi: 10.1039/C5NR07085Fen
dc.identifier.doi10.1039/C5NR07085F
dc.identifier.endpage2187en
dc.identifier.issn2040-3364
dc.identifier.issued4en
dc.identifier.journaltitleNanoscaleen
dc.identifier.startpage2177en
dc.identifier.urihttps://hdl.handle.net/10468/6741
dc.identifier.volume8en
dc.language.isoenen
dc.publisherRoyal Society of Chemistry (RSC)en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Research Centres/12/RC/2278/IE/Advanced Materials and BioEngineering Research Centre (AMBER)/en
dc.relation.urihttp://pubs.rsc.org/en/content/articlepdf/2016/nr/c5nr07085f
dc.rights© The Royal Society of Chemistry 2016en
dc.subjectBlock copolymersen
dc.subjectEffective interaction parametersen
dc.subjectIron oxide nanowiresen
dc.subjectLamellar patternsen
dc.subjectMechanical robustnessen
dc.subjectMicrophase separateden
dc.subjectSelf assembled filmsen
dc.subjectSi nanowire arraysen
dc.subjectSilicon nanowire arraysen
dc.subjectEthyleneen
dc.subjectMetal ionsen
dc.subjectMetalsen
dc.subjectNanowiresen
dc.subjectOptical propertiesen
dc.subjectPolyethylene oxidesen
dc.subjectPorous siliconen
dc.subjectSiliconen
dc.subjectSilicon oxidesen
dc.titleFabrication of ultra-dense sub-10 nm in-plane Si nanowire arrays by using a novel block copolymer method: optical propertiesen
dc.typeArticle (peer-reviewed)en
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