Defect profiling of Al2O3-passivated InGaP layers via planar test structures

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dc.contributor.authorTorraca, Paolo La
dc.contributor.authorKirilenko, Pavel
dc.contributor.authorBharti, Rajan
dc.contributor.authorJain, Muskan
dc.contributor.authorBonam, Satish
dc.contributor.authorAnsari, Lida
dc.contributor.authorGity, Farzan
dc.contributor.authorCherkaoui, Karim
dc.contributor.authorTonkikh, Alexander
dc.contributor.authorSizov, Dmitry
dc.contributor.authorGore, Paul
dc.contributor.authorGrundmann, Michael
dc.contributor.authorHurley, Paul K.
dc.contributor.funderMeta
dc.date.accessioned2026-07-01T12:00:02Z
dc.date.available2026-07-01T12:00:02Z
dc.date.issued2026-04-08
dc.description.abstractThe electrically active defects in Al2O3-passivated InGaP layers, representative of an AlInGaP red micro-light-emitting diodes (μ-LED) sidewall, are characterized by using planar metal/insulator/semiconductor (MIS) capacitors test structures. The use of a planar test structure avoids the complexity of the full μ-LED device analysis and enables the selective InGaP/Al2O3 system characterization. The electrically active defects of InGaP/Al2O3/Ni MIS test structures, subject to different surface treatments, are investigated by multifrequency capacitance-voltage (CV) and conductance-voltage (GV) curves analysis. Trap levels located in the InGaP and in the Al2O3 are detected and profiled. The effect of the surface treatment (either no treatment, wet etching, or dry etching) on the detected traps is reported.en
dc.description.versionAccepted Version
dc.format.extent5
dc.format.mimetypeapplication/pdfen
dc.identifier.authororcidTorraca, Paolo La
dc.identifier.authororcidKirilenko, Pavel§0000-0002-8430-1366
dc.identifier.authororcidBharti, Rajan
dc.identifier.authororcidJain, Muskan
dc.identifier.authororcidBonam, Satish
dc.identifier.authororcidAnsari, Lida§0000-0002-9284-2832
dc.identifier.authororcidGity, Farzan
dc.identifier.authororcidCherkaoui, Karim§0000-0002-7062-5570
dc.identifier.authororcidTonkikh, Alexander
dc.identifier.authororcidSizov, Dmitry
dc.identifier.authororcidGore, Paul
dc.identifier.authororcidGrundmann, Michael
dc.identifier.authororcidHurley, Paul K.
dc.identifier.citationTorraca, P L, Kirilenko, P, Bharti, R, Jain, M, Bonam, S, Ansari, L, Gity, F, Cherkaoui, K, Tonkikh, A, Sizov, D, Gore, P, Grundmann, M & Hurley, P K 2026, Defect profiling of Al 2 O 3 -passivated InGaP layers via planar test structures. in 2026 38th IEEE International Conference on Microelectronic Test Structures (ICMTS 2026). IEEE International Conference on Microelectronic Test Structures, Institute of Electrical and Electronics Engineers Inc., pp. 1-5, 38th IEEE International Conference on Microelectronic Test Structures, ICMTS 2026, Matsue, Japan, 23/03/26. https://doi.org/10.1109/ICMTS69943.2026.11471662
dc.identifier.doi10.1109/ICMTS69943.2026.11471662
dc.identifier.endpage5
dc.identifier.isbn9798319530103
dc.identifier.issn1071-9032
dc.identifier.otherORCID: /0000-0002-9284-2832/work/219410775
dc.identifier.otherORCID: /0000-0002-8430-1366/work/219410788
dc.identifier.otherORCID: /0000-0002-7062-5570/work/219410891
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/18985
dc.language.isoen
dc.publisherInstitute of Electrical and Electronics Engineers Inc.
dc.relation.ispartofseriesIEEE International Conference on Microelectronic Test Structures
dc.relation.urihttps://www.scopus.com/pages/publications/105037161621
dc.rights© 2026, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
dc.rights.accessrightsopen access
dc.statusPeer reviewed
dc.subjectAlO
dc.subjectDefect
dc.subjectInGaP
dc.subjectSidewall
dc.subjectTrap
dc.subjectμ-LED
dc.subject[TyndallMicroNano]
dc.titleDefect profiling of Al2O3-passivated InGaP layers via planar test structuresen
dc.typeConference item
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