Defect profiling of Al2O3-passivated InGaP layers via planar test structures
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Date
2026-04-08
Authors
Torraca, Paolo La
Kirilenko, Pavel
Bharti, Rajan
Jain, Muskan
Bonam, Satish
Ansari, Lida
Gity, Farzan
Cherkaoui, Karim
Tonkikh, Alexander
Sizov, Dmitry
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Publisher
Institute of Electrical and Electronics Engineers Inc.
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Abstract
The electrically active defects in Al2O3-passivated InGaP layers, representative of an AlInGaP red micro-light-emitting diodes (μ-LED) sidewall, are characterized by using planar metal/insulator/semiconductor (MIS) capacitors test structures. The use of a planar test structure avoids the complexity of the full μ-LED device analysis and enables the selective InGaP/Al2O3 system characterization. The electrically active defects of InGaP/Al2O3/Ni MIS test structures, subject to different surface treatments, are investigated by multifrequency capacitance-voltage (CV) and conductance-voltage (GV) curves analysis. Trap levels located in the InGaP and in the Al2O3 are detected and profiled. The effect of the surface treatment (either no treatment, wet etching, or dry etching) on the detected traps is reported.
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Keywords
AlO , Defect , InGaP , Sidewall , Trap , μ-LED , [TyndallMicroNano]
Citation
Torraca, P L, Kirilenko, P, Bharti, R, Jain, M, Bonam, S, Ansari, L, Gity, F, Cherkaoui, K, Tonkikh, A, Sizov, D, Gore, P, Grundmann, M & Hurley, P K 2026, Defect profiling of Al 2 O 3 -passivated InGaP layers via planar test structures. in 2026 38th IEEE International Conference on Microelectronic Test Structures (ICMTS 2026). IEEE International Conference on Microelectronic Test Structures, Institute of Electrical and Electronics Engineers Inc., pp. 1-5, 38th IEEE International Conference on Microelectronic Test Structures, ICMTS 2026, Matsue, Japan, 23/03/26. https://doi.org/10.1109/ICMTS69943.2026.11471662
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