TiN/ZrO2/Ti/Al metal–insulator–metal capacitors with subnanometer CET using ALD-deposited ZrO2 for DRAM applications

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dc.contributor.authorMonaghan, Scott
dc.contributor.authorCherkaoui, Karim
dc.contributor.authorO'Connor, Éamon
dc.contributor.authorDjara, Vladimir
dc.contributor.authorHurley, Paul K.
dc.contributor.authorOberbeck, L.
dc.contributor.authorTois, E.
dc.contributor.authorWilde, L.
dc.contributor.authorTeichert, S.
dc.contributor.funderSixth Framework Programmeen
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderGovernment of Irelanden
dc.contributor.funderEuropean Commissionen
dc.date.accessioned2022-06-22T11:51:43Z
dc.date.available2022-06-22T11:51:43Z
dc.date.issued2009-02-10
dc.date.updated2022-06-20T10:06:56Z
dc.description.abstractWe provide the first report of the structural and electrical properties of TiN/ZrO 2 /Ti/Al metal-insulator-metal capacitor structures, where the ZrO 2 thin film (7-8 nm) is deposited by ALD using the new zirconium precursor ZrD-04, also known as Bis(methylcyclopentadienyl) methoxymethyl. Measured capacitance-voltage ( C - V ) and current-voltage ( I - V ) characteristics are reported for premetallization rapid thermal annealing (RTP) in N 2 for 60 s at 400degC, 500degC, or 600degC. For the RTP at 400degC, we find very low leakage current densities on the order of nanoamperes per square centimeter at a gate voltage of 1 V and low capacitance equivalent thickness values of ~ 0.9 nm at a gate voltage of 0 V. The dielectric constant of ZrO 2 is 31 plusmn 2 after RTP treatment at 400degC.en
dc.description.sponsorshipSixth Framework Programme (REALISE Project NMP4-CT-2006-016172); Science Foundation Ireland (Grant 05/IN/1751); Government of Ireland (National Development Plan); European Commission (European Union Structural Funds)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationMonaghan, S., Cherkaoui, K., O'Connor, É., Djara, V., Hurley, P. K., Oberbeck, L., Tois, E., Wilde, L. and Teichert, S, (2009) 'TiN/ZrO2/Ti/Al metal–insulator–metal capacitors with subnanometer CET using ALD-deposited ZrO2 for DRAM applications', IEEE Electron Device Letters, 30(3), pp. 219-221. doi: 10.1109/LED.2008.2012356en
dc.identifier.doi10.1109/LED.2008.2012356en
dc.identifier.eissn1558-0563
dc.identifier.endpage221en
dc.identifier.issn0741-3106
dc.identifier.issued3en
dc.identifier.journaltitleIEEE Electron Device Lettersen
dc.identifier.startpage219en
dc.identifier.urihttps://hdl.handle.net/10468/13309
dc.identifier.volume30en
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.rights© 2009, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en
dc.subjectALDen
dc.subjectCapacitoren
dc.subjectDynamic random access memory (DRAM)en
dc.subjectEffective dielectric constanten
dc.subjectGate oxideen
dc.subjectHigh-ken
dc.subjectMetal–insulator–metal (MIM)en
dc.subjectZrD-04en
dc.subjectZrO2en
dc.titleTiN/ZrO2/Ti/Al metal–insulator–metal capacitors with subnanometer CET using ALD-deposited ZrO2 for DRAM applicationsen
dc.typeArticle (peer-reviewed)en
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