Electrical performance of III-V gate-all-around nanowire transistors

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dc.contributor.authorRazavi, Pedram
dc.contributor.authorFagas, GĂ­orgos
dc.contributor.funderScience Foundation Ireland
dc.contributor.funderEuropean Commission
dc.date.accessioned2017-07-28T09:23:23Z
dc.date.available2017-07-28T09:23:23Z
dc.date.issued2013
dc.description.abstractThe performance of III-V inversion-mode and junctionless nanowire field-effect transistors are investigated using quantum simulations and are compared with those of silicon devices. We show that at ultrascaled dimensions silicon can offer better electrical performance in terms of short-channel effects and drive current than other materials. This is explained simply by suppression of source-drain tunneling due to the higher effective mass, shorter natural length, and the higher density of states in the confined channel. We also confirm that III-V junctionless nanowire transistors are more immune to short-channel effects than conventional inversion-mode III-V nanowire field-effect transistors. (C) 2013 AIP Publishing LLC.en
dc.description.sponsorshipScience Foundation Ireland (06/IN.1/I857); European Union project SQWIRE (257111)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid63506
dc.identifier.citationRazavi, P. and Fagas, G. (2013) 'Electrical performance of III-V gate-all-around nanowire transistors', Applied Physics Letters, 103(6), pp. 063506. doi: 10.1063/1.4817997en
dc.identifier.doi10.1063/1.4817997
dc.identifier.endpage3
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued6
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4281
dc.identifier.volume103
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::ICT/257111/EU/Silicon Quantum Wire Transistors/SQWIRE
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.4817997
dc.rights© 2013 AIP Publishing LLC..This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Razavi, P. and Fagas, G. (2013) 'Electrical performance of III-V gate-all-around nanowire transistors', Applied Physics Letters, 103(6), pp. 063506 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4817997en
dc.subjectField-effect transistorsen
dc.subjectCompound semiconductorsen
dc.subjectSilicon nanowiresen
dc.subjectSoi mosfetsen
dc.titleElectrical performance of III-V gate-all-around nanowire transistorsen
dc.typeArticle (peer-reviewed)en
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