Diagnosis of phosphorus monolayer doping in silicon based on nanowire electrical characterisation

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dc.contributor.authorDuffy, Ray
dc.contributor.authorRicchio, Alessio
dc.contributor.authorMurphy, Ruaidhrí
dc.contributor.authorMaxwell, Graeme
dc.contributor.authorMurphy, Richard
dc.contributor.authorPiaszenski, Guido
dc.contributor.authorPetkov, Nikolay
dc.contributor.authorHydes, Alan
dc.contributor.authorO'Connell, Dan
dc.contributor.authorLyons, Colin
dc.contributor.authorKennedy, Noel
dc.contributor.authorSheehan, Brendan
dc.contributor.authorSchmidt, Michael
dc.contributor.authorCrupi, Felice
dc.contributor.authorHolmes, Justin D.
dc.contributor.authorHurley, Paul K.
dc.contributor.authorConnolly, James
dc.contributor.authorHatem, Chris
dc.contributor.authorLong, Brenda
dc.contributor.funderEnterprise Irelanden
dc.contributor.funderEuropean Regional Development Funden
dc.date.accessioned2018-04-03T14:09:51Z
dc.date.available2018-04-03T14:09:51Z
dc.date.issued2018-03-23
dc.date.updated2018-04-03T14:02:19Z
dc.description.abstractThe advent of high surface-to-volume ratio devices has necessitated a revised approach to parameter extraction and process evaluation in field-effect transistor technologies. In this work, active doping concentrations are extracted from the electrical analysis of Si nanowire devices with high surface-to-volume ratios. Nanowire resistance and Si resistivity are extracted, by first extracting and subtracting out the contact resistance. Resistivity (ρ) is selected as the benchmark parameter to compare different doping processes with each other. The impacts of nanowire diameter scaling to 10 nm and of nanowire spacing scaling to <20 nm are extracted for monolayer doping and beam-line ion implantation. Despite introducing significant crystal damage, P beam-line ion implantation beats allyldiphenylphosphine (ADP) P monolayer doping with a SiO2 cap in terms of lower Si resistivity and higher dopant activation, with dependencies on the nanowire width greater than on nanowire spacing. Limitations in ADP P monolayer doping with a SiO2 cap are due to the difficulties in dopant incorporation, as it is based on in-diffusion, and P atoms must overcome a potential barrier on the Si surface.en
dc.description.sponsorshipEnterprise Ireland (Project IP-2015-0368); European Commission (European Regional Development Fund (ERDF) under Ireland's European Structural and Investment Funds Programmes 2014–2020)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationDuffy, R., Ricchio, A., Murphy, R., Maxwell, G., Murphy, R., Piaszenski, G., Petkov, N., Hydes, A., O'Connell, D., Lyons, C., Kennedy, N., Sheehan, B., Schmidt, M., Crupi, F., Holmes, J. D., Hurley, P. K., Connolly, J., Hatem, C. and Long, B. (2018) 'Diagnosis of phosphorus monolayer doping in silicon based on nanowire electrical characterisation', Journal of Applied Physics, 123(12), 125701 (14pp). doi: 10.1063/1.5019470en
dc.identifier.doi10.1063/1.5019470
dc.identifier.endpage125701-14en
dc.identifier.issn0021-8979
dc.identifier.issued12en
dc.identifier.journaltitleJournal of Applied Physicsen
dc.identifier.startpage125701-1en
dc.identifier.urihttps://hdl.handle.net/10468/5724
dc.identifier.volume123en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttps://aip.scitation.org/doi/full/10.1063/1.5019470en
dc.rights© 2018, AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Journal of Applied Physics 123, 125701 (2018) and may be found at https://aip.scitation.org/doi/full/10.1063/1.5019470en
dc.subjectElectrical engineeringen
dc.subjectCondensed matter propertiesen
dc.subjectDopingen
dc.subjectSemiconductor devicesen
dc.subjectCondensed matter physicsen
dc.subjectElectronic transporten
dc.subjectElectronic devicesen
dc.subjectNanowiresen
dc.subjectGeneral physicsen
dc.subjectSemiconductor device fabricationen
dc.titleDiagnosis of phosphorus monolayer doping in silicon based on nanowire electrical characterisationen
dc.typeArticle (peer-reviewed)en
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