Photoconductive properties of Bi2S3 nanowires

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dc.contributor.authorAndzane, Jana
dc.contributor.authorKunakova, Gunta
dc.contributor.authorVarghese, Justin M.
dc.contributor.authorHolmes, Justin D.
dc.contributor.authorErts, Donats
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderNational Research Program of Latviaen
dc.date.accessioned2016-01-26T16:43:49Z
dc.date.available2016-01-26T16:43:49Z
dc.date.issued2015-02-14
dc.date.updated2015-02-18T15:59:56Z
dc.description.abstractThe photoconductive properties of Bi2S3 nanowires synthesized inside anodized alumina (AAO) membrane have been characterized as a function of illuminating photon energy between the wavelengths of 500 to 900 nm and at constant illumination intensity of 1–4 μW·cm−2. Photoconductivity spectra, photocurrent values, photocurrent onset/decay times of individual Bi2S3 nanowires liberated from the AAO membrane were determined and compared with those of arrays of as-produced Bi2S3 nanowires templated inside pores of AAO membrane. The alumina membrane was found to significantly influence the photoconductive properties of the AAO-hosted Bi2S3 nanowires, when compared to liberated from the AAO membrane individual Bi2S3 nanowires, possibly due to charge carrier trapping at the interface between the nanowire surface and the pore walls.en
dc.description.sponsorshipScience Foundation Ireland (FORME Strategic Research Cluster Award (Project No. 07/SRC/I1172)); National Research Program of Latvia (IMIS 2)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid064305
dc.identifier.citationANDZANE, J., KUNAKOVA, G., VARGHESE, J., HOLMES, J. D. & ERTS, D. 2015. Photoconductive properties of Bi2S3 nanowires. Journal of Applied Physics, 117: 064305, 1-6. http://scitation.aip.org/content/aip/journal/jap/117/6/10.1063/1.4907867en
dc.identifier.doi10.1063/1.4907867
dc.identifier.endpage064305(6)en
dc.identifier.issn00218979
dc.identifier.issued6en
dc.identifier.journaltitleJournal of Applied Physicsen
dc.identifier.startpage064305(1)en
dc.identifier.urihttps://hdl.handle.net/10468/2220
dc.identifier.volume117en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://scitation.aip.org/content/aip/journal/jap
dc.rights© 2015, AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.The following article appeared in Journal of Applied Physics 117: 064305 (2015) and may be found at http://scitation.aip.org/content/aip/journal/jap/117/6/10.1063/1.4907867en
dc.rights.urihttp://publishing.aip.org/authors/rights-and-permissionsen
dc.subjectOne-dimensional nanostructuresen
dc.subjectThin filmsen
dc.subjectArraysen
dc.subjectPhotodetectorsen
dc.subjectAluminaen
dc.subjectMembranesen
dc.subjectNanowiresen
dc.subjectAlumina membranesen
dc.subjectAnodized aluminaen
dc.subjectCharge carrier trappingen
dc.subjectIllumination intensityen
dc.subjectNanowire surfaceen
dc.subjectPhotoconductive propertiesen
dc.subjectPhotoconductivity spectrumen
dc.subjectPhoton energyen
dc.subjectPhotoconductivityen
dc.subjectElectron trapsen
dc.subjectNanofabricationen
dc.subjectBismuth compoundsen
dc.subjectSemiconductor growthen
dc.subjectSemiconductor quantum wiresen
dc.subjectSemiconductor materialsen
dc.titlePhotoconductive properties of Bi2S3 nanowiresen
dc.typeArticle (peer-reviewed)en
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