Scrutinizing pre- and post-device fabrication properties of atomic layer deposition WS2 thin films

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dc.contributor.authorColeman, Emma
dc.contributor.authorMonaghan, Scott
dc.contributor.authorGity, Farzan
dc.contributor.authorMirabelli, Gioele
dc.contributor.authorDuffy, Ray
dc.contributor.authorSheehan, Brendan
dc.contributor.authorBalasubramanyam, Shashank
dc.contributor.authorBol, Ageeth A.
dc.contributor.authorHurley, Paul K.
dc.contributor.funderHorizon 2020 Framework Programme
dc.contributor.funderScience Foundation Ireland
dc.contributor.funderEuropean Research Council
dc.date.accessioned2023-08-28T10:58:35Z
dc.date.available2023-08-21T17:28:38Zen
dc.date.available2023-08-28T10:58:35Z
dc.date.issued2023-07-06
dc.date.updated2023-08-21T16:28:41Zen
dc.description.abstractIn this work, we investigate the physical and electrical properties of WS2 thin films grown by a plasma-enhanced atomic layer deposition process, both before and after device fabrication. The WS2 films were deposited on thermally oxidized silicon substrates using the W(NMe2)2(NtBu)2 precursor and a H2S plasma at 450 °C. The WS2 films were approximately 8 nm thick, measured from high-resolution cross-sectional transmission electron imaging, and generally exhibited the desired horizontal basal-plane orientation of the WS2 layers to the SiO2 surface. Hall analysis revealed a p-type behavior with a carrier concentration of 1.31 × 1017 cm−3. Temperature-dependent electrical analysis of circular transfer length method test structures, with Ni/Au contacts, yielded the activation energy (Ea) of both the specific contact resistivity and the WS2 resistivity as 100 and 91 meV, respectively. The similarity of these two values indicates that the characteristics of both are dominated by the temperature dependence of the WS2 hole concentration. Change in the material, such as in sheet resistance, due to device fabrication is attributed to the chemicals and thermal treatments associated with resist spinning and baking, ambient and UV exposure, metal deposition, and metal lift off for contact pad formation.
dc.description.statusPeer revieweden
dc.description.versionPublished Version
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid011901
dc.identifier.citationColeman, E., Monaghan, S., Gity, F., Mirabelli, G., Duffy, R., Sheehan, B., Balasubramanyam, S., Bol, A.A. and Hurley, P. (2023) ‘Scrutinizing pre- and post-device fabrication properties of atomic layer deposition WS2 thin films’, Applied Physics Letters, 123(1), 011901, https://doi.org/10.1063/5.0151592.
dc.identifier.doihttps://doi.org/10.1063/5.0151592en
dc.identifier.eissn1077-3118
dc.identifier.endpage6
dc.identifier.issn0003-6951
dc.identifier.journaltitleApplied Physics Letters
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/14876
dc.identifier.volume123
dc.language.isoenen
dc.publisherAIP Publishing
dc.relation.projectinfo:eu-repo/grantAgreement/EC/H2020::RIA/871130/EU/Access to European Infrastructure for Nanoelectronics/ASCENTPlus
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Research Centres/12/RC/2278/IE/Advanced Materials and BioEngineering Research Centre (AMBER)/
dc.relation.projectinfo:eu-repo/grantAgreement/EC/H2020::ERC::ERC-COG/648787/EU/Atomic layer deposition of two-dimensional transition metal dichalcogenide nanolayers/ALDof 2DTMDs
dc.relation.urihttps://doi.org/10.1063/5.0151592
dc.rights© 2023, the Authors. All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http:// creativecommons.org/licenses/by/4.0/).
dc.rights.urihttp:// creativecommons.org/licenses/by/4.0/
dc.subjectHall effect
dc.subjectElectrical properties and parameters
dc.subjectElectric measurements
dc.subjectMaterials heat treatment
dc.subjectAtomic force microscopy
dc.subjectAtomic layer deposition
dc.subjectMetal deposition
dc.subjectThin films
dc.subjectTransmission electron microscopy
dc.titleScrutinizing pre- and post-device fabrication properties of atomic layer deposition WS2 thin filmsen
dc.typeArticle (peer-reviewed)
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