Optical properties of metamorphic type-I InAs1-xSbx/AlyIn1-yAs quantum wells grown on GaAs for the mid-infrared spectral range

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dc.contributor.authorRepiso, Eva
dc.contributor.authorBroderick, Christopher A.
dc.contributor.authorde la Mata, Maria
dc.contributor.authorArkani, Reza
dc.contributor.authorLu, Qi
dc.contributor.authorMarshall, Andrew R. J.
dc.contributor.authorMolina, Sergio I.
dc.contributor.authorO'Reilly, Eoin P.
dc.contributor.authorCarrington, Peter J.
dc.contributor.authorKrier, Anthony
dc.contributor.funderEuropean Commissionen
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderEngineering and Physical Sciences Research Councilen
dc.contributor.funderNational University of Irelanden
dc.contributor.funderRoyal Academy of Engineeringen
dc.contributor.funderSpanish Ministry of Economy and Competitivenessen
dc.contributor.funderAndalusian Research Councilen
dc.date.accessioned2019-12-03T10:18:03Z
dc.date.available2019-12-03T10:18:03Z
dc.date.issued2019-08-30
dc.description.abstractWe analyse the optical properties of InAs1−x Sb x /Al y In1−y As quantum wells (QWs) grown by molecular beam epitaxy on relaxed Al y In1−y As metamorphic buffer layers (MBLs) using GaAs substrates. The use of Al y In1−y As MBLs allows for the growth of QWs having large type-I band offsets, and emission wavelengths  >3 m. Photoluminescence (PL) measurements for QWs having Sb compositions up to x  =  10% demonstrate strong room temperature PL up to 3.4 m, as well as enhancement of the PL intensity with increasing wavelength. To quantify the trends in the measured PL we calculate the QW spontaneous emission (SE), using a theoretical model based on an eight-band Hamiltonian. The theoretical calculations, which are in good agreement with experiment, identify that the observed enhancement in PL intensity with increasing wavelength is associated with the impact of compressive strain on the QW valence band structure, which reduces the band edge density of states making more carriers available to undergo radiative recombination at fixed carrier density. Our results highlight the potential of type-I InAs1−x Sb x /Al y In1−y As metamorphic QWs to address several limitations associated with existing heterostructures operating in the mid-infrared, establishing these novel heterostructures as a suitable platform for the development of light-emitting diodes and diode lasers.en
dc.description.sponsorshipRoyal Academy of Engineering (Research Fellowship no. 10216/114); Spanish Ministry of Economy and Competitiveness (MINECO; project no. TEC2017-86102-C2-2-R); Andalusian Research Council (PAI; research group TEP-946 INNANOMAT)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid465102en
dc.identifier.citationRepiso, E., Broderick, C. A., de la Mata, M., Arkani, R., Lu, Q., Marshall, A. R. J., Molina, S. I., O’Reilly, E. P., Carrington, P. J. and Krier, A. (2019) 'Optical properties of metamorphic type-I InAs1−x Sb x /Al y In1−y As quantum wells grown on GaAs for the mid-infrared spectral range', Journal of Physics D: Applied Physics, 52(46), 465102. (11pp.) doi: 10.1088/1361-6463/ab37cfen
dc.identifier.doi10.1088/1361-6463/ab37cfen
dc.identifier.eissn1361-6463
dc.identifier.endpage11en
dc.identifier.issn0022-3727
dc.identifier.issued46en
dc.identifier.journaltitleJournal of Physics D: Applied Physicsen
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/9291
dc.identifier.volume52en
dc.language.isoenen
dc.publisherInstitute of Physics Publishingen
dc.relation.projectinfo:eu-repo/grantAgreement/EC/H2020::MSCA-ITN-ETN/641899/EU/Postgraduate Research on Dilute Metamorphic Nanostructures and Metamaterials in Semiconductor Photonics/PROMISen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Investigator Programme/15/IA/3082/IE/Multiscale Simulation and Analysis of emerging Group IV and III-V Semiconductor Materials and Devices/en
dc.relation.projectinfo:eu-repo/grantAgreement/RCUK/EPSRC/EP/N018605/1/GB/Novel InSb quantum dots monolithically grown on silicon for low cost mid-infrared light emitting diodes/en
dc.rights© 2019 IOP Publishing Ltd. Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.en
dc.rights.urihttp://creativecommons.org/licenses/by/3.0en
dc.subjectSemiconductorsen
dc.subjectPhotonicsen
dc.subjectMid-infrareden
dc.subjectLight-emitting diodeen
dc.subjectMetamorphic heterostructureen
dc.subjectMolecular beam epitaxyen
dc.subjectModellingen
dc.titleOptical properties of metamorphic type-I InAs1-xSbx/AlyIn1-yAs quantum wells grown on GaAs for the mid-infrared spectral rangeen
dc.typeArticle (peer-reviewed)en
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